Surface Mount N Channel Power Transistor MATSUKI ME2N7002D with ESD Protection and Low Inline Power Loss
Key Attributes
Model Number:
ME2N7002D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
35pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
ME2N7002D
Package:
SOT-23
Product Description
Product Overview
The ME2N7002D is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection up to 2000V HBM.
Product Attributes
- Brand: ME (implied by product name ME2N7002D)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: ROHS Compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Min. | Typ. | Max. | Notes |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | 60 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current | ID | 300 | mA | TA=25°C | |||
| Pulsed Drain Current | IDM | 2000 | mA | Note 1 | |||
| Maximum Power Dissipation | PD | 0.35 | W | @TA=25°C | |||
| Maximum Power Dissipation | PD | 0.21 | W | @TA=75°C | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 ~ 150 | °C | ||||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RθJA | 357 | °C/W | Note 2 | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0, ID=10uA | |||
| Gate Threshold Voltage | VGS(th) | V | 1.0 | 2.5 | VDS=VGS, ID=250uA | ||
| Forward Transconductance | gfs | 100 | mS | VDS=15V, ID=250mA | |||
| Gate Body Leakage | IGSS | ±10 | uA | VGS=±20V , VDS=0V | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V, VGS=0V | |||
| Drain-Source On-State Resistance | RDS(ON) | 3 | Ω | VGS=10V, ID=500mA | |||
| Drain-Source On-State Resistance | RDS(ON) | 4 | Ω | VGS=4.5V, ID=200mA | |||
| Total Gate Charge | Qg | 0.8 | nC | ID=200mA , VDS=15V, VGS=4.5V | |||
| Turn-on Time | Td(on) | 20 | nS | VDD=30V , RL=150Ω, ID=200mA , VGEN=10V, RG=10Ω | |||
| Turn-off Time | Td(off) | 40 | nS | VDD=30V , RL=150Ω, ID=200mA , VGEN=10V, RG=10Ω | |||
| Input Capacitance | Ciss | 35 | pF | VGS=0V, VDS=25V, f=1.0MHz | |||
| Output Capacitance | Coss | 10 | pF | VGS=0V, VDS=25V, f=1.0MHz | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | VGS=0V, VDS=25V, f=1.0MHz | |||
| Source-Drain Diode | |||||||
| Diode Forward Voltage | VSD | 1.3 | V | 0.82 | IS=200mA, VGS=0V | ||
2410121532_MATSUKI-ME2N7002D_C709743.pdf
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