Surface mount dual small signal transistor LRC LMBT5541DW1T1G with ROHS and halogen free compliance
Key Attributes
Model Number:
LMBT5541DW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
2 NPN + 2 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT5541DW1T1G
Package:
SC-88
Product Description
Product Overview
The LMBT5541DW1T1G and LMBT5541DW1T3G are dual small signal NPN transistors from LESHAN RADIO COMPANY, LTD., designed for surface mounting. They offer complementary PNP characteristics and are suitable for various electronic applications. The devices are ROHS compliant and halogen-free.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Product Series: LMBT5541DW1T1G, LMBT5541DW1T3G
- Package: SOT-363/SC-88
- Compliance: ROHS compliant, Halogen free
- Special Feature: S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Technical Specifications
| Characteristic | Symbol | NPN (Q2) Min | NPN (Q2) Max | NPN (Q2) Unit | PNP (Q1) Min | PNP (Q1) Max | PNP (Q1) Unit |
| CollectorEmitter Voltage (V CEO) | V CEO | -150 | Vdc | 140 | Vdc | ||
| CollectorBase Voltage (V CBO) | V CBO | -160 | Vdc | 160 | Vdc | ||
| EmitterBase Voltage (V EBO) | V EBO | -5.0 | Vdc | 6.0 | Vdc | ||
| Collector Current Continuous (I C) | I C | -50 | 0 mAdc | 600 | mAdc | ||
| CollectorEmitter Breakdown Voltage (V (BR)CEO) | V (BR)CEO | -150 | Vdc | Vdc | |||
| CollectorBase Breakdown Voltage (V (BR)CBO) | V (BR)CBO | -160 | Vdc | Vdc | |||
| EmitterBase Breakdown Voltage (V (BR)EBO) | V (BR)EBO | -5.0 | Vdc | Vdc | |||
| Collector Cutoff Current (I CBO) | I CBO | -50 | nAdc | 50 | nAdc | ||
| Emitter Cutoff Current (I EBO) | I EBO | nAdc | 50 | nAdc | |||
| DC Current Gain (hFE) (IC = 1.0mAdc, V CE = 5.0 Vdc) | hFE | 50 | |||||
| DC Current Gain (hFE) (IC = 10 mAdc, V CE = 5.0 Vdc) | hFE | 60 | 240 | ||||
| DC Current Gain (hFE) (IC = 50 mAdc, V CE = 5.0 Vdc) | hFE | 50 | |||||
| DC Current Gain (hFE) (IC = 1.0 mAdc, V CE = 5.0 Vdc) | hFE | 80 | |||||
| DC Current Gain (hFE) (IC = 10 mAdc, V CE = 5.0 Vdc) | hFE | 80 | 250 | ||||
| DC Current Gain (hFE) (IC = 50 mAdc, V CE = 5.0 Vdc) | hFE | 30 | |||||
| CollectorEmitter Saturation Voltage (VCE(sat)) (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | -0.2 | Vdc | Vdc | |||
| CollectorEmitter Saturation Voltage (VCE(sat)) (IC = 50 mAdc, IB = 5.0 mAdc) | VCE(sat) | -0.5 | Vdc | Vdc | |||
| CollectorEmitter Saturation Voltage (VCE(sat)) (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | Vdc | 0.15 | Vdc | |||
| CollectorEmitter Saturation Voltage (VCE(sat)) (IC = 50 mAdc, IB = 5.0 mAdc) | VCE(sat) | Vdc | 0.20 | Vdc | |||
| BaseEmitter Saturation Voltage (VBE(sat)) (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | -1.0 | Vdc | Vdc | |||
| BaseEmitter Saturation Voltage (VBE(sat)) (IC = 50 mAdc, IB = 5.0 mAdc) | VBE(sat) | -1.0 | Vdc | Vdc | |||
| BaseEmitter Saturation Voltage (VBE(sat)) (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | Vdc | 1.0 | Vdc | |||
| BaseEmitter Saturation Voltage (VBE(sat)) (IC = 50 mAdc, IB = 5.0 mAdc) | VBE(sat) | Vdc | 1.0 | Vdc | |||
| CurrentGain Bandwidth Product (f T) (IC = 10 mAdc, V CE= 10 Vdc, f = 100 MHz) | f T | MHz | 100 | 300 | MHz | ||
| Output Capacitance (C obo) (VCB= 10 Vdc, I E = 0, f = 1.0 MHz) | C obo | pF | 6.0 | pF | |||
| SmallSignal Current Gain (h fe) (IC= 1.0mAdc,VCE = 10Vdc, f = 1.0 kHz) | h fe | 40 | 200 | ||||
| Noise Figure (N F) (IC = 200 Adc,VCE= 5.0 Vdc,Rs=10, f = 1.0 kHz) | N F | 8.0 | dB | dB |
2108072330_LRC-LMBT5541DW1T1G_C2846985.pdf
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