power transistor MATSUKI ME4565 featuring N channel and P channel devices for surface mount power solutions
Key Attributes
Model Number:
ME4565
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5.2A;4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V;43mΩ@10V
Gate Threshold Voltage (Vgs(th)):
900mV;1V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.3pF;22pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
43pF;81pF
Input Capacitance(Ciss):
500pF;1nF
Pd - Power Dissipation:
2.5W;2.45W
Gate Charge(Qg):
8nC@4.5V;12nC@4.5V
Mfr. Part #:
ME4565
Package:
SOP-8
Product Description
Product Overview
The ME4565 is an N- and P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | N-Channel Unit | P-Channel Unit | N-Channel Limit | P-Channel Limit |
| Drain-Source Voltage | VDSS | V | V | 40 | -40 |
| Gate-Source Voltage | VGSS | V | V | 16 | 16 |
| Continuous Drain Current (Tj=150) | ID | A | A | TA=25: 5.2 (Steady State), 3.9 (10 secs) | TA=25: -4.5 (Steady State), -3.3 (10 secs) |
| TA=70: 4.2 (Steady State), 3.1 (10 secs) | TA=70: -3.6 (Steady State), -2.7 (10 secs) | ||||
| Pulsed Drain Current | IDM | A | A | 30 | 20 |
| Avalanche Current (L=0.1mH) | IAS | A | A | 13 | 16 |
| Single Pulse Avalanche Energy | EAS | mJ | mJ | 8.5 | 13 |
| Maximum Power Dissipation | PD | W | W | TA=25: 2.5 (Steady State), 2.45 (10 secs) | TA=25: 1.56 (Steady State), 1.52 (10 secs) |
| TA=70: 2.0 (Steady State), 2.0 (10 secs) | TA=70: 1.3 (Steady State), 1.27 (10 secs) | ||||
| Operating Junction Temperature | TJ | -55 to 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | /W | /W | TA=25: 50 (10 secs), 80 (Steady State) | TA=25: 51 (10 secs), 82 (Steady State) |
| Thermal Resistance-Junction to Case | RJC | /W | /W | 49 | 50 |
| Drain-Source Breakdown Voltage | V(BR)DSS | V | V | 40 | -40 |
| Gate Threshold Voltage | VGS(th) | V | V | 0.6 ~ 1.6 | -0.8 ~ -1.8 |
| Gate Leakage Current | IGSS | nA | nA | 100 | 100 |
| Zero Gate Voltage Drain Current | IDSS | A | A | 1 (VDS=40V, VGS=0V) | -1 (VDS=-40V, VGS=0V) |
| On-State Drain Current | ID(ON) | A | A | 20 (VDS5V, VGS=10V) | -20 (VDS-5V, VGS=-10V) |
| Drain-Source On-State Resistance | RDS(ON) | m | m | VGS=10V, ID=5.2A: 32 (Typ), 40 (Max) | VGS=-10V, ID=-4.5A: 43 (Typ), 54 (Max) |
| VGS=4.5V, ID=4.9A: 35 (Typ), 45 (Max) | VGS=-4.5V, ID=-3.9A: 48 (Typ), 60 (Max) | ||||
| Forward Transconductance | GFS | S | S | 18 (VDS=15V, ID=5.2A) | 13 (VDS=-15V, ID=-4.5A) |
| Diode Forward Voltage | VSD | V | V | 0.78 (IS=1.7A, VGS=0V) | -0.79 (IS=-1.7A, VGS=0V) |
| Total Gate Charge | Qg | nC | nC | 8 (Typ), 12 (Max) | 10 (Typ), 14 (Max) |
| Gate-Source Charge | Qgs | nC | nC | 3.3 (Typ) | 5 (Typ) |
| Gate-Drain Charge | Qgd | nC | nC | 2.8 (Typ) | 5.2 (Typ) |
| Gate Resistance | Rg | 0.7 (Typ) | 4.5 (Typ) | ||
| Input Capacitance | Ciss | pF | pF | 500 (Typ), 600 (Max) | 1000 (Typ), 1100 (Max) |
| Output Capacitance | Coss | pF | pF | 43 (Typ) | 81 (Typ) |
| Reverse Transfer Capacitance | Crss | pF | pF | 9.3 (Typ) | 22 (Typ) |
| Turn-On Delay Time | td(on) | ns | ns | 8 (Typ) | 30 (Typ) |
| Turn-On Rise Time | tr | ns | ns | 15 (Typ) | 12 (Typ) |
| Turn-Off Delay Time | td(off) | ns | ns | 36 (Typ) | 62 (Typ) |
| Turn-On Fall Time | tf | ns | ns | 2 (Typ) | 5 (Typ) |
2410121532_MATSUKI-ME4565_C709724.pdf
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