Automotive P Channel MOSFET LRC LBSS84WT1G with SC 70 Package and AEC Q101 Qualification
Key Attributes
Model Number:
LBSS84WT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.7pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
38pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
LBSS84WT1G
Package:
SC-70
Product Description
Product Overview
This product is a P-Channel Power MOSFET designed for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, offering energy efficiency. The device is available in a SC-70 (SOT-323) package and is RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Qualification: AEC-Q101 qualified
- Capability: PPAP capable
- Package: SC-70 (SOT-323)
Technical Specifications
| Model | Description | DrainSource Voltage (VDSS) | Continuous Drain Current (ID) | Pulsed Drain Current (IDM) | GatetoSource Voltage (VGS) | Continuous Current (IS) | Pulsed Current (ISM) | Forward Voltage (VSD) | Total Device Dissipation (PD) | Thermal Resistance JunctiontoAmbient (RJA) | Junction and Storage Temperature (TJ,Tstg) | Maximum Lead Temperature for Soldering (TL) | Gate Threshold Voltage (VGS(th)) | Static DrainSource OnState Resistance (RDS(on)) | Transfer Admittance (yfs) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-On Delay Time (td(on)) | Rise Time (tr) | Turn-Off Delay Time (td(off)) | Fall Time (tf) | Marking | Shipping |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LBSS84WT1G | Power MOSFET P-Channel | -50 V | -130 mA | -520 mA | 20 V | -0.13 A | -0.52 A | -2.5 V | 225 mW (Derate above 25C) | 556 C/W | -55+150 C | 260 C (10 seconds) | -0.8 V | 25 (VGS = -5.0 V, ID = -100 mA) / 25 (VGS = -10 V, ID = -100 mA) | 50 mS | 38 pF | 17.9 pF | 4.8 pF | - ns | - ns | - ns | - ns | LBSS84WT1G | 3000/Tape&Reel |
| S-LBSS84WT1G | Power MOSFET P-Channel (Automotive) | -50 V | -130 mA | -520 mA | 20 V | -0.13 A | -0.52 A | -2.5 V | 225 mW (Derate above 25C) | 556 C/W | -55+150 C | 260 C (10 seconds) | -0.8 V | 25 (VGS = -5.0 V, ID = -100 mA) / 25 (VGS = -10 V, ID = -100 mA) | 50 mS | 38 pF | 17.9 pF | 4.8 pF | - ns | - ns | - ns | - ns | S-LBSS84WT1G | 3000/Tape&Reel |
| LBSS84WT3G | Power MOSFET P-Channel | -50 V | -130 mA | -520 mA | 20 V | -0.13 A | -0.52 A | -2.5 V | 225 mW (Derate above 25C) | 556 C/W | -55+150 C | 260 C (10 seconds) | -0.8 V | 25 (VGS = -5.0 V, ID = -100 mA) / 25 (VGS = -10 V, ID = -100 mA) | 50 mS | 38 pF | 17.9 pF | 4.8 pF | - ns | - ns | - ns | - ns | LBSS84WT3G | 10000/Tape&Reel |
| Parameter | Symbol | Limits | Unit |
|---|---|---|---|
| DrainSource Breakdown Voltage (VGS = 0, ID = -250A) | VBRDSS | -50 | V |
| Zero Gate Voltage Drain Current (VGS = 0, VDS = -25 V) | IDSS | -0.1 | A |
| Zero Gate Voltage Drain Current (VGS = 0, VDS = -50 V) | IDSS | -10 | A |
| Zero Gate Voltage Drain Current (VGS = 0, VDS = -50 V, TJ=125C) | IDSS | -15 | A |
| GateBody Leakage Current, Forward (VGS = 20 V) | IGSSF | - | A |
| GateBody Leakage Current, Reverse (VGS = -20 V) | IGSSR | -10 | A |
| Gate Threshold Voltage (VDS = VGS, ID = -250A) | VGS(th) | -0.52 to -1.5 | V |
| Static DrainSource OnState Resistance (VGS = -10 V, ID = -100 mA) | RDS(on) | 25 | |
| Transfer Admittance (VDS = -25 V, ID = -100 mA, f = 1.0 kHz) | |yfs| | 50 | mS |
| Input Capacitance (VDS = -15 V, VGS=0V, f=1MHz) | Ciss | 38 | pF |
| Output Capacitance (VDS = -15 V, VGS=0V, f=1MHz) | Coss | 17.9 | pF |
| Reverse Transfer Capacitance (VDS = -15 V, VGS=0V, f=1MHz) | Crss | 4.8 | pF |
| Turn-On Delay Time (VDS = 15 V, VGS=-10V ,RL = 50,RG=25) | td(on) | - | ns |
| Rise Time (VDS = 15 V, VGS=-10V ,RL = 50,RG=25) | tr | - | ns |
| Turn-Off Delay Time (VDS = 15 V, VGS=-10V ,RL = 50,RG=25) | td(off) | - | ns |
| Fall Time (VDS = 15 V, VGS=-10V ,RL = 50,RG=25) | tf | - | ns |
| Continuous Current | IS | -0.13 | A |
| Pulsed Current | ISM | -0.52 | A |
| Forward Voltage | VSD | -2.5 | V |
| Dimension | SC70 MIN | SC70 NOR | SC70 MAX | Unit |
|---|---|---|---|---|
| A | 0.80 | 0.95 | 1.00 | mm |
| A1 | 0.00 | 0.05 | 0.10 | mm |
| A2 | 0.7 REF | |||
| b | 0.30 | 0.35 | 0.40 | mm |
| c | 0.10 | 0.15 | 0.25 | mm |
| D | 1.80 | 2.05 | 2.20 | mm |
| E | 1.15 | 1.30 | 1.35 | mm |
| He | 2.00 | 2.10 | 2.40 | mm |
| e | 1.20 | 1.30 | 1.40 | BSC |
| e1 | 0.20 | 0.35 | 0.56 | mm |
| L | 0.65 | BSC | ||
| X | 0.70 | |||
| Y | 0.90 |
| DIM | SC70 MIN | SC70 | SC70 MAX |
|---|---|---|---|
| A | 1.90 | ||
| B | 0.65 | ||
| C | 0.65 |
1912111437_LRC-LBSS84WT1G_C383208.pdf
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