High Reliability NPN Silicon Transistor LRC L9014QLT1G Ideal for Electronic Switching Applications

Key Attributes
Model Number: L9014QLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9014QLT1G
Package:
SOT-23
Product Description

Product Overview

The L9014 is a general-purpose NPN Silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014 transistor. This device is suitable for various electronic applications requiring reliable switching and amplification.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Type: NPN Silicon Transistor
  • Complementary to: L9014
  • RoHS Compliance: Yes
  • Automotive Qualification (S-Prefix): AEC-Q101 Qualified and PPAP Capable

Technical Specifications

SymbolCharacteristicValueUnitConditions
VCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage50V
VEBOEmitter-Base Voltage5V
ICCollector Current-Continuous100mA
PDTotal Device Dissipation (FR-5 Board)225mWTA=25oC
PDTotal Device Dissipation (Alumina Substrate)300mWTA=25oC
RJAThermal Resistance, Junction to Ambient (FR-5 Board)556°C/W
RJAThermal Resistance, Junction to Ambient (Alumina Substrate)417°C/W
TJ ,TstgJunction and Storage Temperature-55 to +150°C
V(BR)CEOCollector-Emitter Breakdown Voltage45VIC=1.0mA
V(BR)EBOEmitter-Base Breakdown Voltage5VIE=100µA
V(BR)CBOCollector-Base Breakdown Voltage50VIC=100µA
ICBOCollector Cutoff Current100nAVCB=40V
IEBOEmitter Cutoff Current100nAVEB=3V
HFEDC Current Gain150 - 1000IC=1mA, VCE=5V
VCE(sat)Collector-Emitter Saturation Voltage-0.3VIC=100mA, IB=5mA

1810010215_LRC-L9014QLT1G_C78547.pdf

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