Compact P Channel MOSFET MATSUKI ME2323D with Low Gate Leakage Current and High Switching Performance
Key Attributes
Model Number:
ME2323D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
75mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 P-Channel
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
220pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10.5nC@4.5V
Mfr. Part #:
ME2323D
Package:
SOT-23
Product Description
Product Overview
The ME2323D(-G) is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Series: ME2323D/ME2323D-G
- Certifications: Pb-free (ME2323D), Green product-Halogen free (ME2323D-G)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| P-Channel 20-V (D-S) MOSFET, ESD Protection | ||||||
| Drain-Source Voltage | VDS | VGS=0V, ID=-250A | -20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.25 | -0.5 | -1 | V |
| Gate Leakage Current | IGSS | VDS=0V, VGS=4.5V | 5 | A | ||
| Gate Leakage Current | IGSS | VDS=0V, VGS=8V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-16V, VGS=0V | -1 | A | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID= -4.0A | 45 | 50 | m | |
| Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID= -3.0A | 52 | 65 | m | |
| Drain-Source On-Resistance | RDS(ON) | VGS=-1.8V, ID= -2.0A | 60 | 75 | m | |
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | -0.78 | -1 | V | |
| Total Gate Charge | Qg | VDS=-10V, VGS=-4.5V, ID=-4A | 10.5 | nC | ||
| Gate-Source Charge | Qgs | 0.5Qg | ||||
| Gate-Drain Charge | Qgd | |||||
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHz | 220 | pF | ||
| Output Capacitance | Coss | 95 | pF | |||
| Reverse Transfer Capacitance | Crss | 30 | pF | |||
| Turn-On Delay Time | td(on) | VDS=-10V, RL =2.5 RGEN=3, VGS=-4.5V | 560 | ns | ||
| Turn-On Rise Time | tr | 4000 | ns | |||
| Turn-Off Delay Time | td(off) | 400 | ns | |||
| Turn-Off Fall Time | tf | 4000 | ns | |||
| Maximum Power Dissipation | PD | TA=25 | 1.4 | W | ||
| Maximum Power Dissipation | PD | TA=70 | 0.9 | W | ||
| Continuous Drain Current | ID | TA=25 | -4.2 | A | ||
| Continuous Drain Current | ID | TA=70 | -3.3 | A | ||
| Pulsed Drain Current | IDM | -17 | A | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | * | 90 | /W | ||
| Absolute Maximum Ratings | TA=25 Unless Otherwise Noted | |||||
| Gate-Source Voltage | VGS | -8 | 8 | V |
2410121449_MATSUKI-ME2323D_C145077.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
