Power MOSFET MATSUKI ME10N15-G N channel transistor with low on resistance and surface mount package
Key Attributes
Model Number:
ME10N15-G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
7.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
21pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
538pF@25V
Pd - Power Dissipation:
32.1W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
ME10N15-G
Package:
TO-252-3
Product Description
Product Overview
The ME10N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is particularly beneficial in very small outline surface mount packages.
Product Attributes
- Brand: Matsuki Electric/Force Mos (implied by datasheet content)
- Product Series: ME10N15/ME10N15-G
- Package Type: TO-252-3L
- Certifications: Pb-free (ME10N15), Green product-Halogen free (ME10N15-G)
Technical Specifications
| Parameter | Symbol | ME10N15/ME10N15-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 150 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (TC=25) | ID | 7.6 | A |
| Continuous Drain Current (TC=70) | ID | 6.1 | A |
| Pulsed Drain Current | IDM | 30 | A |
| Maximum Power Dissipation (TC=25) | PD | 32.1 | W |
| Maximum Power Dissipation (TC=70) | PD | 20.5 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Case (TC=25) | RJC | 3.9 | /W |
| Electrical Characteristics (TC =25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 150 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 1 - 3 | V |
| Gate Leakage Current (VDS=0V, VGS=20V) | IGSS | 100 | nA |
| Zero Gate Voltage Drain Current (VDS=120V, VGS=0V) | IDSS | 1 | A |
| Drain-Source On-Resistance (VGS=10V, ID=7A) | RDS(ON) | 285 - 345 | m |
| Drain-Source On-Resistance (VGS=4.5V, ID=6A) | RDS(ON) | 290 - 365 | m |
| Diode Forward Voltage (IS=1.8A, VGS=0V) | VSD | 0.8 - 1.2 | V |
| Dynamic Characteristics (TJ =25 Noted) | |||
| Total Gate Charge (VDS=75V, VGS=10V, ID=10A) | Qg | 17.5 | nC |
| Gate-Source Charge | Qgs | 4.5 | nC |
| Gate-Drain Charge | Qgd | 4.7 | nC |
| Input Capacitance (VDS=25V, VGS=0V,f=1MHz) | Ciss | 538 | pF |
| Output Capacitance | Coss | 55 | pF |
| Reverse Transfer Capacitance | Crss | 21 | pF |
| Turn-On Delay Time (VDS=75V, RL =10.68, VGEN=10V, RG=6) | td(on) | 11.6 | ns |
| Turn-On Rise Time | tr | 9.3 | ns |
| Turn-Off Delay Time | td(off) | 29.3 | ns |
| Turn-Off Fall Time | tf | 3.7 | ns |
2410121643_MATSUKI-ME10N15-G_C709773.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
