High Speed N Channel MOSFET LRC LSI1012XT1G with Continuous Drain Current and Gate Source Protection

Key Attributes
Model Number: LSI1012XT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@4.5V,600mA
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
750pC@4.5V
Mfr. Part #:
LSI1012XT1G
Package:
SC-89
Product Description

Product Overview

The LSI1012XT1G and S-LSI1012XT1G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They feature gate-source ESD protection, low on-resistance (0.7 typical), and a low threshold voltage (0.8V typical) for efficient operation. These devices offer fast switching speeds (10 ns) and are suitable for driving relays, solenoids, lamps, displays, and memory. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent control change requirements. Both models are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification (S- prefix): AEC-Q101
  • PPAP Capability (S- prefix): Yes

Technical Specifications

Model Device Marking Continuous Drain Current (mA) (TJ = 150) Continuous Drain Current (mA) (TA = 25) Continuous Drain Current (mA) (TA = 85) Pulsed Drain Current (A) (5 secs) Continuous Source Current (A) (diode conduction) Drain-Source Voltage (V) Gate-Source Voltage (V) Maximum Power Dissipation (mW) (TA = 25) Maximum Power Dissipation (mW) (TA = 85) Operating Junction and Storage Temperature Range () Shipping Package Type
LSI1012XT1G A 600 500 400 1000 275 20 6 275 160 -55 ~ +150 3000/Tape&Reel SC89
S-LSI1012XT1G A 600 500 400 1000 275 20 6 275 160 -55 ~ +150 10000/Tape&Reel SC89
LSI1012XT3G A - 350 250 - 250 20 6 250 140 -55 ~ +150 - SC89

Electrical Characteristics (Ta= 25C)

Characteristic Symbol Min. Typ. Max. Unit
Static Gate Threshold Voltage VGS(th) 0.45 - 0.9 V
Gate-Body Leakage IGSS - 0.5 1 A
Zero Gate Voltage Drain Current IDSS - 0.3 100 nA
(VDS = 20 V, VGS = 0 V, TJ = 85) - - 5 A
Drain-Source On-State Resistance RDS(on) - 0.7 -
(VGS = 4.5 V, ID = 600 mA) - 0.41 0.53
(VGS = 2.5 V, ID = 500 mA) - 0.53 0.85
(VGS = 1.8 V, ID = 350 mA) - 0.85 1.25
Diode Forward Voltage VSD - 0.8 1.2 V
(IS = 150 mA, VGS = 0 V) - - - -
Drain-Source Breakdown Voltage V(BR)DSS 20 - - V

Dynamic Characteristics (Note 2)

Characteristic Symbol Typ. Unit
Total Gate Charge Qg 750 pC
Gate-Source Charge Qgs 75 pC
Gate-Drain Charge Qgd 225 pC
Turn-On Delay Time td(on) 5 ns
Rise Time tr 5 ns
Turn-Off Delay Time td(off) 5 ns
Fall Time tf 5 ns

Applications

  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching in Cell Phones, Pagers

Outline and Dimensions (SC89 Package)

Dimension Millimeters (MIN) Millimeters (NOM) Millimeters (MAX) Inches (MIN) Inches (NOM) Inches (MAX)
A 1.50 1.60 1.70 0.059 0.063 0.067
B 0.75 0.85 0.95 0.030 0.034 0.037
C 0.60 0.70 0.80 0.024 0.028 0.031
D 0.23 0.28 0.33 0.009 0.011 0.013
G 0.50BSC 0.50BSC 0.50BSC 0.020BSC 0.020BSC 0.020BSC
H 0.53REF 0.53REF 0.53REF 0.021REF 0.021REF 0.021REF
J 0.10 0.15 0.20 0.004 0.006 0.008
K 0.30 0.40 0.50 0.012 0.016 0.020
L 1.10REF 1.10REF 1.10REF 0.043REF 0.043REF 0.043REF
S 1.50 1.60 1.70 0.059 0.063 0.067

2111041830_LRC-LSI1012XT1G_C383275.pdf

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