High Speed N Channel MOSFET LRC LSI1012XT1G with Continuous Drain Current and Gate Source Protection
Product Overview
The LSI1012XT1G and S-LSI1012XT1G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They feature gate-source ESD protection, low on-resistance (0.7 typical), and a low threshold voltage (0.8V typical) for efficient operation. These devices offer fast switching speeds (10 ns) and are suitable for driving relays, solenoids, lamps, displays, and memory. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent control change requirements. Both models are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Qualification (S- prefix): AEC-Q101
- PPAP Capability (S- prefix): Yes
Technical Specifications
| Model | Device Marking | Continuous Drain Current (mA) (TJ = 150) | Continuous Drain Current (mA) (TA = 25) | Continuous Drain Current (mA) (TA = 85) | Pulsed Drain Current (A) (5 secs) | Continuous Source Current (A) (diode conduction) | Drain-Source Voltage (V) | Gate-Source Voltage (V) | Maximum Power Dissipation (mW) (TA = 25) | Maximum Power Dissipation (mW) (TA = 85) | Operating Junction and Storage Temperature Range () | Shipping | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LSI1012XT1G | A | 600 | 500 | 400 | 1000 | 275 | 20 | 6 | 275 | 160 | -55 ~ +150 | 3000/Tape&Reel | SC89 |
| S-LSI1012XT1G | A | 600 | 500 | 400 | 1000 | 275 | 20 | 6 | 275 | 160 | -55 ~ +150 | 10000/Tape&Reel | SC89 |
| LSI1012XT3G | A | - | 350 | 250 | - | 250 | 20 | 6 | 250 | 140 | -55 ~ +150 | - | SC89 |
Electrical Characteristics (Ta= 25C)
| Characteristic | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Static Gate Threshold Voltage | VGS(th) | 0.45 | - | 0.9 | V |
| Gate-Body Leakage | IGSS | - | 0.5 | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | - | 0.3 | 100 | nA |
| (VDS = 20 V, VGS = 0 V, TJ = 85) | - | - | 5 | A | |
| Drain-Source On-State Resistance | RDS(on) | - | 0.7 | - | |
| (VGS = 4.5 V, ID = 600 mA) | - | 0.41 | 0.53 | ||
| (VGS = 2.5 V, ID = 500 mA) | - | 0.53 | 0.85 | ||
| (VGS = 1.8 V, ID = 350 mA) | - | 0.85 | 1.25 | ||
| Diode Forward Voltage | VSD | - | 0.8 | 1.2 | V |
| (IS = 150 mA, VGS = 0 V) | - | - | - | - | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | - | - | V |
Dynamic Characteristics (Note 2)
| Characteristic | Symbol | Typ. | Unit |
|---|---|---|---|
| Total Gate Charge | Qg | 750 | pC |
| Gate-Source Charge | Qgs | 75 | pC |
| Gate-Drain Charge | Qgd | 225 | pC |
| Turn-On Delay Time | td(on) | 5 | ns |
| Rise Time | tr | 5 | ns |
| Turn-Off Delay Time | td(off) | 5 | ns |
| Fall Time | tf | 5 | ns |
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching in Cell Phones, Pagers
Outline and Dimensions (SC89 Package)
| Dimension | Millimeters (MIN) | Millimeters (NOM) | Millimeters (MAX) | Inches (MIN) | Inches (NOM) | Inches (MAX) |
|---|---|---|---|---|---|---|
| A | 1.50 | 1.60 | 1.70 | 0.059 | 0.063 | 0.067 |
| B | 0.75 | 0.85 | 0.95 | 0.030 | 0.034 | 0.037 |
| C | 0.60 | 0.70 | 0.80 | 0.024 | 0.028 | 0.031 |
| D | 0.23 | 0.28 | 0.33 | 0.009 | 0.011 | 0.013 |
| G | 0.50BSC | 0.50BSC | 0.50BSC | 0.020BSC | 0.020BSC | 0.020BSC |
| H | 0.53REF | 0.53REF | 0.53REF | 0.021REF | 0.021REF | 0.021REF |
| J | 0.10 | 0.15 | 0.20 | 0.004 | 0.006 | 0.008 |
| K | 0.30 | 0.40 | 0.50 | 0.012 | 0.016 | 0.020 |
| L | 1.10REF | 1.10REF | 1.10REF | 0.043REF | 0.043REF | 0.043REF |
| S | 1.50 | 1.60 | 1.70 | 0.059 | 0.063 | 0.067 |
2111041830_LRC-LSI1012XT1G_C383275.pdf
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