Low On State Resistance LP2301ALT1G P Channel Enhancement Mode MOSFET with 20V Maximum Voltage Rating
Key Attributes
Model Number:
LP2301ALT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
400mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
480pF@15V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
-
Mfr. Part #:
LP2301ALT1G
Package:
SOT-23E
Product Description
Product Overview
The LP2301ALT1G and S-LP2301ALT1G are 20V P-Channel Enhancement-Mode MOSFETs designed for power management in notebooks, portable equipment, battery-powered systems, load switches, and DSC applications. These devices offer low on-state resistance and are compliant with RoHS requirements and Halogen Free standards. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Automotive Qualification (S-prefix): AEC-Q101 qualified and PPAP capable
Technical Specifications
| Model | Description | VDS (Max) | RDS(ON) (Typ. @ VGS, ID) | VGS(th) (Typ. @ ID) | ID (Continuous) | Package | Marking | Order Information |
|---|---|---|---|---|---|---|---|---|
| LP2301ALT1G | P-Channel Enhancement-Mode MOSFET | -20V | 110m @ -4.5V, -2.8A 150m @ -2.5V, -2.0A | -0.6V @ -250A | -1A | SOT23 (TO-236) | 01A | 3000/Tape&Reel |
| S-LP2301ALT1G | P-Channel Enhancement-Mode MOSFET (Automotive Qualified) | -20V | 110m @ -4.5V, -2.8A 150m @ -2.5V, -2.0A | -0.6V @ -250A | -1A | SOT23 (TO-236) | 01A | 10000/Tape&Reel |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | |||||
| GatetoSource Voltage Continuous | VGS | 8 | V | ||
| DrainSource Voltage | VDSS | -20 | V | ||
| Drain Current (Note 1) | ID | -1 | A | ||
| Pulsed Drain Current (Note 1) | IDM | -10 | A | ||
| Maximum Power Dissipation | PD | 0.7 | W | ||
| Thermal Resistance, JunctiontoAmbient (Note 1) | RJA | 175 | C/W | ||
| Junction and Storage temperature | TJ, Tstg | -55 | +150 | C | |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||
| DrainSource Breakdown Voltage (VGS = 0, ID = -250A) | VBRDSS | -20 | V | ||
| Zero Gate Voltage Drain Current (VGS = 0, VDS = -20 V) | IDSS | -1 | A | ||
| GateBody Leakage Current, Forward (VGS = 8 V) | IGSSF | 100 | nA | ||
| GateBody Leakage Current, Reverse (VGS = - 8 V) | IGSSR | -100 | nA | ||
| Gate Threshold Voltage (VDS = VGS, ID = -250A) | VGS(th) | -0.6 | -1.0 | V | |
| Static DrainSource OnState Resistance (VGS = -4.5 V, ID = -2.8 A) | RDS(on) | 110 | m | ||
| Static DrainSource OnState Resistance (VGS = -2.5 V, ID = -2 A) | RDS(on) | 150 | m | ||
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) | Ciss | 480 | pF | ||
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) | Coss | 110 | pF | ||
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) | Crss | 90 | pF | ||
| Turn-On Delay Time | td(on) | 11 | ns | ||
| Rise Time | tr | 50 | ns | ||
| Turn-Off Delay Time | td(off) | 40 | ns | ||
| Fall Time | tf | 30 | ns | ||
| Forward Voltage (VGS = 0 V, ISD = -1 A) | VSD | -0.7 | -1.4 | V | |
| Dimension | MIN | NOM | MAX | Unit |
|---|---|---|---|---|
| A | 0.89 | 1.11 | 1.3 | mm |
| A1 | 0.01 | 0.06 | 0.1 | mm |
| b | 0.37 | 0.44 | 0.5 | mm |
| c | 0.09 | 0.13 | 0.18 | mm |
| D | 2.80 | 2.9 | 3.04 | mm |
| E | 2.10 | 2.4 | 2.64 | mm |
| e | 0.35 | mm | ||
| HE | 1.78 | 1.9 | 2.04 | mm |
| L | 0.35 | 0.54 | mm | |
| L1 | 0.10 | 0.2 | 0.3 | mm |
| 0 | 10 |
2410010101_LRC-LP2301ALT1G_C2842079.pdf
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