General purpose silicon npn transistor LRC S-LBSS4240LT1G with high current capability and rohs compliance
Key Attributes
Model Number:
S-LBSS4240LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBSS4240LT1G
Package:
SOT-23
Product Description
Product Overview
The LBSS4240LT1G and S-LBSS4240LT1G are general-purpose NPN silicon transistors designed for various switching and control applications. They offer low collector-emitter saturation voltage and high current capability, contributing to improved device reliability through reduced heat generation. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent site and control change requirements. These transistors are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix)
- Compliance: PPAP capable (S-prefix)
Technical Specifications
| Parameter | Symbol | LBSS4240LT1G / S-LBSS4240LT1G | Unit | Notes |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Collector-Base Voltage | VCBO | 40 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current-Continuous | IC | 2 | A | |
| Total Power Dissipation | PD | 0.3 | W | Device mounted on a printed-circuit board, single sided copper, tin-plated and mounted pad for collector 1 cm. |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Thermal Resistance Junction to Ambient | RJA | 417 | C/W | Note 1 |
| Thermal Resistance Junction to Ambient | RJA | 260 | C/W | Note 2 |
| Thermal Resistance Junction to Case | RJC | 150 | C/W | Note 1 |
| Collector-Base Cut-off Current | ICBO | 100 | nA | IE = 0, VCB = 30 V |
| Emitter-Base Cut-off Current | IEBO | 100 | nA | IC = 0, VEB = 4 V |
| Collector-Emitter Cut-off Current | ICEO | 1 | A | IB=0, VCE = 40V |
| DC Current Gain | hFE | 150 - 350 | IC = 100 mA, VCE = 2 V | |
| DC Current Gain | hFE | 300 - 300 | IC = 500 mA, VCE = 2 V | |
| DC Current Gain | hFE | 300 - 300 | IC = 750 mA, VCE = 2 V | |
| DC Current Gain | hFE | 180 - 180 | IC = 1 A, VCE = 2 V | |
| DC Current Gain | hFE | 70 - 100 | IC = 2 A, VCE = 2 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | V | IC = 100 mA, IB = 1 mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1 | V | IC = 500 mA, IB = 50 mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1 | V | IC = 750 mA, IB = 15 mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1 | V | IC = 1 A, IB = 50 mA (Note 3) |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1 | V | IC = 2 A, IB = 200 mA (Note 3) |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.1 | V | IC = 2 A, IB = 200 mA (Note 3) |
| Base-Emitter Turn On Voltage | VBE(on) | 0.75 | V | IC = 100 mA, VCE = 2 V |
| Collector Capacitance | Cc | 20 | pF | IE = Ie = 0, VCB = 10 V, f = 1 MHz |
| Transition Frequency | fT | 100 | MHz | IC = 100 mA, VCE = 10 V, f = 100 MHz |
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 40 | V | IC= 10mA, IB= 0A |
| Collector-Base Breakdown Voltage | VBR(CBO) | 40 | V | IC= 100A, IE= 0A |
| Emitter-Base Breakdown Voltage | VBR(EBO) | 5 | V | IE= 100A, IC= 0A |
2201121900_LRC-S-LBSS4240LT1G_C2941709.pdf
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