Power switching MOSFET LRC LN2502LT1G 20V N Channel featuring low RDS ON and high density cell design
Key Attributes
Model Number:
LN2502LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF@8V
Number:
1 N-channel
Input Capacitance(Ciss):
565pF@8V
Pd - Power Dissipation:
-
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
LN2502LT1G
Package:
SOT-23
Product Description
Product Overview
The LN2502LT1G is a 20V N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for applications requiring efficient power switching and low conduction losses. This MOSFET offers excellent performance characteristics, including low RDS(ON) values at various gate-source voltages and drain currents.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT 23 (TO236AB)
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Unit |
|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | (TA = 25oC) | 6 | A |
| Pulsed Drain Current | IDM | (1) | 33 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | oC | |
| Electrical Characteristics | ||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS = 2.5V, ID = 5.2A | 50.0 (Typ: 42.0) | m |
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5V, ID = 6A | 40.0 (Typ: 33.0) | m |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.4 (Typ) | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 1 (Typ) | uA |
| Gate Body Leakage | IGSS | VGS = 12V, VDS = 0V | 100 (Typ) | nA |
| Forward Transconductance | gfs | VDS = 10V, ID = 6A | 5 (Typ) | S |
| Dynamic Characteristics (3) | ||||
| Total Gate Charge | Qg | VDS = 10V, ID = 6A, VGS = 4.5V | 7 (Typ) | nC |
| Gate-Source Charge | Qgs | VDS = 10V, ID = 6A, VGS = 4.5V | 1.5 (Typ) | nC |
| Gate-Drain Charge | Qgd | VDS = 10V, ID = 6A, VGS = 4.5V | 1 (Typ) | nC |
| Turn-On Delay Time | td(on) | VDD = 10V, RG = 6, ID = 1A, VGS= 4.5V | 20 (Typ) | ns |
| Turn-On Rise Time | tr | VDD = 10V, RG = 6, ID = 1A, VGS= 4.5V | 20 (Typ) | ns |
| Turn-Off Delay Time | td(off) | VDD = 10V, RG = 6, ID = 1A, VGS= 4.5V | 45 (Typ) | ns |
| Turn-Off Fall Time | tf | VDD = 10V, RG = 6, ID = 1A, VGS= 4.5V | 15 (Typ) | ns |
| Input Capacitance | Ciss | VDS = 8V, VGS = 0V, f = 1.0 MHz | 565 (Typ) | pF |
| Output Capacitance | Coss | VDS = 8V, VGS = 0V, f = 1.0 MHz | 105 (Typ) | pF |
| Reverse Transfer Capacitance | Crss | VDS = 8V, VGS = 0V, f = 1.0 MHz | 75 (Typ) | pF |
| Source-Drain Diode | ||||
| Max. Diode Forward Current | IS | 1.7 | A | |
| Diode Forward Voltage | VSD | IS = 1.7A, VGS = 0V | 1.2 (Typ) | V |
| Ordering Information | ||||
| Model | Device Marking | Shipping | ||
| LN2502LT1G | N25 | 3000/Tape& Reel | ||
| LN2502LT3G | N25 | 10000/Tape& Reel | ||
Notes:
1. Repetitive Rating: Pulse width limited by the maximum junction temperature.
3. Pulse test: pulse width <= 300us, duty cycle <= 2%.
2410010130_LRC-LN2502LT1G_C383246.pdf
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