AEC Q101 Qualified Silicon Transistor LRC LBC858BLT1G PNP Type Suitable for Automotive Applications
Key Attributes
Model Number:
LBC858BLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
4uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC858BLT1G
Package:
SOT-23
Product Description
Product Overview
The LBC857CLT1G Series are PNP Silicon General Purpose Transistors designed for a wide range of applications. They are AEC-Q101 Qualified and PPAP Capable, making them suitable for automotive and other applications requiring unique site and control change requirements. These transistors offer robust performance with high ESD ratings.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: AEC-Q101 Qualified, PPAP Capable
- RoHS Compliance: Declared
- Moisture Sensitivity Level: 1
Technical Specifications
| Series | Device Marking | Package | Shipping | VCEO (Max) V | VCBO (Max) V | VEBO (Max) V | IC (Max) mAdc | PD (Max) mW | RJA (C/W) | TJ, Tstg (C) |
| LBC856 Series | 3A, 3B | SOT-23 | 10000/Tape&Reel, 3000/Tape&Reel | -65 | -80 | -5.0 | -100 | 225 (FR-5), 300 (Alumina) | 556 (FR-5), 417 (Alumina) | -55 to +150 |
| LBC857 Series | 3E, 3F, 3G | SOT-23 | 10000/Tape&Reel, 3000/Tape&Reel | -45 | -50 | -5.0 | -100 | 225 (FR-5), 300 (Alumina) | 556 (FR-5), 417 (Alumina) | -55 to +150 |
| LBC858, LBC859 Series | 3J, 3K, 3L, 4B, 4C | SOT-23 | 10000/Tape&Reel, 3000/Tape&Reel | -30 | -30 | -5.0 | -100 | 225 (FR-5), 300 (Alumina) | 556 (FR-5), 417 (Alumina) | -55 to +150 |
| Characteristic | Symbol | LBC856 Series Min | LBC857 Series Min | LBC858, LBC859 Series Min | Typ | Max | Unit |
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | -65 | -45 | -30 | V | ||
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | V(BR)CES | -80 | -50 | -30 | V | ||
| CollectorBase Breakdown Voltage (IC = 10 A) | V(BR)CBO | -80 | -50 | -30 | V | ||
| EmitterBase Breakdown Voltage (IE = 1.0 mA) | V(BR)EBO | -5.0 | -5.0 | -5.0 | V | ||
| Collector Cutoff Current (VCB = 30 V) | ICBO | -15 | nA | ||||
| Collector Cutoff Current (VCB = 30 V, TA = 150C) | ICBO | -4.0 | A | ||||
| DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) | hFE | 125 | 220 | 250 | 420 | 800 | |
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | -0.3 | V | ||||
| CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VCE(sat) | -0.65 | V | ||||
| BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | -0.7 | V | ||||
| BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VBE(sat) | -0.9 | V | ||||
| BaseEmitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | -0.6 | V | ||||
| BaseEmitter On Voltage (IC = 10 mA, VCE = 5.0 V) | VBE(on) | -0.75 | -0.82 | V | |||
| CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz | ||||
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cob | 4.5 | pF | ||||
| Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) | NF | 4.0 (LBC856, LBC857, LBC858) | 10 (LBC859) | dB |
2304140030_LRC-LBC858BLT1G_C131849.pdf
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