75 volt reverse voltage switching diode LRC LBAS16HT1G for thick and thin film circuit applications
Key Attributes
Model Number:
LBAS16HT1G
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
-
Current - Rectified:
250mA
Mfr. Part #:
LBAS16HT1G
Package:
SOD-323
Product Description
Product Overview
This switching diode is designed for high-speed switching applications in hybrid thick and thin-film circuits. It offers compliance with RoHS and Halogen Free requirements. The S-prefix variant is specifically qualified for automotive and other applications demanding unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. Available in a small plastic SMD package, it provides a maximum continuous reverse voltage of 75 V.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
- Package: SOD323 (SC-76)
- Origin: China (implied by manufacturer name and location)
Technical Specifications
| Parameter | Symbol | LBAS16HT1G / S-LBAS16HT1G | Unit | Notes |
| Continuous Reverse Voltage | VRM | 75 | V | max. |
| Repetitive Peak Reverse Voltage | VRRM | 100 | V | |
| Working Peak Reverse Voltage | VRWM | 100 | V | |
| DC Blocking Voltage | VR | 100 | V | |
| RMS Reverse Voltage | VR(RMS) | 71 | V | |
| Average Rectified Output Current | IO | 250 | mA | |
| Non-Repetitive Peak Forward Current (t=1s) | IFSM | 4 | A | |
| Non-Repetitive Peak Forward Current (t=1s) | IFSM | 1.5 | A | |
| Total Device Dissipation, FR-5 Board | PD | 1.57 | W | @ TA = 25C |
| Derate above 25C | 635 | mW/C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 10000 | C/W | Note 1 |
| Junction and Storage Temperature | TJ,Tstg | -55~+150 | C | |
| Reverse Breakdown Voltage (I(BR)=100A) | VBR | 75 | V | Min. |
| Forward Voltage (IF = 1.0 mAdc) | VF | - | V | Typ. 0.855, Max. 1.0 |
| Forward Voltage (IF = 10 mAdc) | VF | - | V | Typ. 0.95, Max. 1.1 |
| Forward Voltage (IF = 50 mAdc) | VF | - | V | Typ. 1.05, Max. 1.2 |
| Forward Voltage (IF = 150 mAdc) | VF | - | V | Typ. 1.15, Max. 1.3 |
| Reverse Voltage Leakage Current (VR = 75Vdc) | IR | - | A | Max. 1.0 |
| Reverse Voltage Leakage Current (VR = 75Vdc, TJ = 150C) | IR | - | A | Max. 50 |
| Reverse Voltage Leakage Current (VR = 25Vdc, TJ = 150C) | IR | - | A | Max. 10 |
| Diode Capacitance (VR = 0V, f = 1.0 MHz) | CD | - | pF | Typ. 2.0 |
| Reverse Recovery Time (IF=IR=10mAd, RL =50) | trr | - | ns | Typ. 4.0 |
| Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) | VFR | - | V | Typ. 1.75 |
| Device Marking | A6 | LBAS16HT1G | ||
| Device Marking | A6 | S-LBAS16HT1G | ||
| Shipping | 10000/Tape&Reel | LBAS16HT1G | ||
| Shipping | 3000/Tape&Reel | S-LBAS16HT1G |
1811101031_LRC-LBAS16HT1G_C79196.pdf
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