General Purpose NPN Transistor LRC LMBT3904LT1G HW RoHS Compliant Halogen Free Ideal for Automotive
Key Attributes
Model Number:
LMBT3904LT1G-HW
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
LMBT3904LT1G-HW
Package:
SOT-23
Product Description
Product Overview
The LMBT3904LT1G and S-LMBT3904LT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors offer RoHS compliance and Halogen Free materials.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Origin: China (implied by manufacturer name and location)
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (for S-prefix variant)
Technical Specifications
| Parameter | Symbol | LMBT3904LT1G | S-LMBT3904LT1G | Unit |
| MAXIMUM RATINGS | ||||
| CollectorEmitter Voltage | VCEO | 40 | 40 | V |
| CollectorBase Voltage | VCBO | 60 | 60 | V |
| EmitterBase Voltage | VEBO | 6 | 6 | V |
| Collector Current Continuous | IC | 200 | 200 | mA |
| Total Device Dissipation, FR5 Board | PD | 1.8 | 1.8 | mW |
| Derate above 25C | 556 | 556 | mW/C | |
| JunctiontoAmbient Thermal Resistance | RJA | 225 | 225 | C/W |
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C |
| OFF CHARACTERISTICS | ||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | 40 | V |
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 | 60 | V |
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | 6 | V |
| Collector Cutoff Current | ICEX | - | - | nA |
| Base Cutoff Current | IBL | - | - | nA |
| ON CHARACTERISTICS | ||||
| DC Current Gain | HFE | 40 - 70 (IC=0.1mA, VCE=1.0V) | 40 - 70 (IC=0.1mA, VCE=1.0V) | - |
| 100 - 300 (IC=1.0mA, VCE=1.0V) | 100 - 300 (IC=1.0mA, VCE=1.0V) | - | ||
| 60 - 100 (IC=10mA, VCE=1.0V) | 60 - 100 (IC=10mA, VCE=1.0V) | - | ||
| 30 - 60 (IC=50mA, VCE=1.0V) | 30 - 60 (IC=50mA, VCE=1.0V) | - | ||
| 22 - 45 (IC=100mA, VCE=1.0V) | 22 - 45 (IC=100mA, VCE=1.0V) | - | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.2 (IC=10mA, IB=1.0mA) | 0.2 (IC=10mA, IB=1.0mA) | V |
| 0.3 (IC=50mA, IB=5.0mA) | 0.3 (IC=50mA, IB=5.0mA) | V | ||
| BaseEmitter Saturation Voltage | VBE(sat) | 0.85 (IC=10mA, IB=1.0mA) | 0.85 (IC=10mA, IB=1.0mA) | V |
| 0.95 (IC=50mA, IB=5.0mA) | 0.95 (IC=50mA, IB=5.0mA) | V | ||
| SMALLSIGNAL CHARACTERISTICS | ||||
| CurrentGain Bandwidth Product | fT | 300 | 300 | MHz |
| Output Capacitance | Cobo | - | - | pF |
| Input Capacitance | Cibo | - | - | pF |
| SWITCHING CHARACTERISTICS | ||||
| Delay Time | td | - | - | ns |
| Rise Time | tr | - | - | ns |
| Storage Time | ts | - | - | ns |
| Fall Time | tf | - | - | ns |
| DEVICE MARKING AND ORDERING INFORMATION | ||||
| Device Marking | 1AM | 1AM | - | |
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | - | |
2211091800_LRC-LMBT3904LT1G-HW_C2941719.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
