SOT 23 Package P Channel MOSFET LRC LP2301BLT1G Featuring Low On Resistance and RoHS Compliant Design

Name: SOT 23 Package P Channel MOSFET LRC LP2301BLT1G Featuring Low On Resistance and RoHS Compliant Design
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: LP2301BLT1G
Availability: InStock

Key Attributes

Model Number: LP2301BLT1G

Product Custom Attributes

Drain To Source Voltage:

20V

Current - Continuous Drain(Id):

2.8A

Operating Temperature -:

-55℃~+150℃

RDS(on):

100mΩ@4.5V,2.8A

Gate Threshold Voltage (Vgs(th)):

400mV

Reverse Transfer Capacitance (Crss@Vds):

97.26pF@6V

Number:

1 P-Channel

Input Capacitance(Ciss):

882.51pF@6V

Pd - Power Dissipation:

570mW

Gate Charge(Qg):

15.23nC@6V

Mfr. Part #:

LP2301BLT1G

Package:

SOT-23

Product Description

Product Overview

The LP2301BLT1G is a P-Channel Enhancement-Mode MOSFET designed for simple drive requirements and features a small package outline in a SOT-23 (TO-236AB) surface mount device. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is fully characterized for avalanche voltage and current, offering improved shoot-through FOM. It is compliant with RoHS requirements.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Model: LP2301BLT1G
Package Type: SOT 23 (TO236AB)
Technology: Advanced trench process
Compliance: RoHS
Device Marking: 0B

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	VGS = 0V	-20	-	-	V
Gate-Source Voltage	VGS	-	-	-	8	V
Continuous Drain Current	ID	TA = 25oC	-	-2.8	-	A
Pulsed Drain Current	IDM	-	-	-8	-	A
Maximum Power Dissipation	PD	TA = 25oC	-	0.9	-	W
Maximum Power Dissipation	PD	TA = 75oC	-	0.57	-	W
Operating Junction and Storage Temperature Range	TJ, Tstg	-	-55	-	150	oC
Junction-to-Ambient Thermal Resistance (PCB mounted)	RqJA	1-in2 2oz Cu PCB board	-	140	-	oC/W
Junction-to-Case Thermal Resistance	RqJC	-	-	0.9	-	oC/W
Static Drain-Source Breakdown Voltage	BVDSS	VGS = 0V, ID = -250uA	-20	-	-	V
Drain-Source On-State Resistance	RDS(on)	VGS = -4.5V, ID = -2.8A	-	100	-	m
Drain-Source On-State Resistance	RDS(on)	VGS = -2.5V, ID = -2.0A	-	150	-	m
Gate Threshold Voltage	VGS(th)	VDS =VGS, ID = -250uA	-0.40	-	-0.90	V
Zero Gate Voltage Drain Current	IDSS	VDS = -9.6V, VGS = 0V	-	-	-1	uA
Gate Body Leakage	IGSS	VGS = 8V, VDS = 0V	-	-	100	nA
Forward Transconductance	gfs	VDS = -5V, ID = -4.0A	-	6.5	-	S
Total Gate Charge	Qg	VDS = -6V, VGS = 0V, ID = -2.8A	-	15.23	-	nC
Gate-Source Charge	Qgs	VDD = -6V, RL = 6 D = 1, VGEN = -4.5V RG = 6	-	5.49	-	nC
Gate-Drain Charge	Qgd	-	-	2.74	-	nC
Turn-On Delay Time	td(on)	-	-	17.28	-	ns
Turn-On Rise Time	tr	-	-	3.73	-	ns
Turn-Off Delay Time	td(off)	-	-	36.05	-	ns
Turn-Off Fall Time	tf	-	-	6.19	-	ns
Input Capacitance	Ciss	VDS = -6V, VGS = 0V f = 1.0 MHz	-	882.51	-	pF
Output Capacitance	Coss	-	-	145.54	-	pF
Reverse Transfer Capacitance	Crss	-	-	97.26	-	pF
Max. Diode Forward Current	IS	-	-	-2.4	-	A
Diode Forward Voltage	VSD	IS = -0.75A, VGS = 0V	-	-0.8	-1.2	V

Packaging:

3000/Tape & Reel
10,000/Tape & Reel

Ordering Information:

LP2301BLT1G
LP2301BLT3G

Dimensions (SOT-23):

Dimension	Min (inches)	Max (inches)	Min (mm)	Max (mm)
A	0.1102	0.1197	2.80	3.04
B	0.0472	0.0551	1.20	1.40
C	0.0350	0.0440	0.89	1.11
D	0.0150	0.0200	0.37	0.50
G	0.0701	0.0807	1.78	2.04
H	0.0005	0.0040	0.013	0.100
J	0.0034	0.0070	0.085	0.177
K	0.0140	0.0285	0.35	0.69
L	0.0350	0.0401	0.89	1.02
S	0.0830	0.1039	2.10	2.64
V	0.0177	0.0236	0.45	0.60

1811061311_LRC-LP2301BLT1G_C55450.pdf

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