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quality S-LDTD114ELT1G NPN Silicon Transistor Featuring Built-in Thin Film Resistors for Positive Input Biasing factory
quality S-LDTD114ELT1G NPN Silicon Transistor Featuring Built-in Thin Film Resistors for Positive Input Biasing factory

S-LDTD114ELT1G NPN Silicon Transistor Featuring Built-in Thin Film Resistors for Positive Input Biasing

Key Attributes
Model Number: S-LDTD114ELT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
13kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LDTD114ELT1G
Package:
SOT-23
Product Description

Product Overview

The LDTD114ELT1G/LDTD114ELT3G is a NPN Silicon Surface Mount Transistor featuring a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external input resistors, enabling inverter circuit configuration. The built-in thin-film resistors offer complete isolation for positive input biasing and minimize parasitic effects. Ideal for applications requiring easy on/off condition setting, this transistor is suitable for inverter, interface, and driver functions.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Type: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
  • Material Compliance: RoHS requirements
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping Quantity Package Type
LDTD114ELT1G CA 10 10 3000/Tape & Reel SOT-23
LDTD114ELT3G CA 10 10 10000/Tape & Reel SOT-23
S-LDTD114ELT1G CA 10 10 3000/Tape & Reel SOT-23
S-LDTD114ELT1G CA 10 10 10000/Tape & Reel SOT-23
S-LDTD114ELT3G CA 10 10 10000/Tape & Reel SOT-23
Parameter Symbol Unit Conditions Min. Typ. Max.
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC V 50
Input voltage VIN V 10 to +40
Output current IC mA 500
Power dissipation PD mW 200 150
Junction temperature Tj C 55 150
Storage temperature Tstg C 55 150
Electrical Characteristics (Ta=25C)
Input voltage (off) VI(off) V VCC= 5V, IO= 100A 0.1
Input voltage (on) VI(on) V VO= 0.3V, IO= 10mA 0.3
Output voltage (on) VO(on) V IO/II= 50mA/2.5mA 0.1
Input current II A VI= 5V 1
Output current IO mA VCC= 50V, VI=0V 0.5
Input resistance R1 k VO= 5V, IO= 50mA 7 10
DC current gain GI VCE=10V, IE= 50mA, f=100MHz 56 200
Resistance ratio R2/R1 0.88 1 1.2
Transition frequency fT MHz 13
*Characteristics of built-in transistor
Dimension Symbol MIN NOM MAX Unit
A A 0.89 1.12 mm
A1 A1 0.01 0.10 mm
A2 A2 0.88 0.95 1.02 mm
b b 0.30 0.50 mm
b1 b1 0.30 0.40 0.45 mm
c c 0.08 0.20 mm
c1 c1 0.08 0.10 0.16 mm
D D 2.80 2.90 3.04 mm
E E 2.10 2.64 mm
E1 E1 1.20 1.30 1.40 mm
e e 0.95BSC
e1 e1 1.90BSC
L L 0.40 0.46 0.60 mm
L1 L1 0.54REF
0 8

2404091719_LRC-S-LDTD114ELT1G_C5368878.pdf

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