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quality Low Voltage N Channel MOSFET LRC L2N7002KN3T5G Featuring RoHS Compliance and Halogen Free Material factory
quality Low Voltage N Channel MOSFET LRC L2N7002KN3T5G Featuring RoHS Compliance and Halogen Free Material factory

Low Voltage N Channel MOSFET LRC L2N7002KN3T5G Featuring RoHS Compliance and Halogen Free Material

Key Attributes
Model Number: L2N7002KN3T5G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
32.8pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
700pC@10V
Mfr. Part #:
L2N7002KN3T5G
Package:
SOT-883-3
Product Description

Product Overview

The L2N7002KN3T5G is a N-Channel Small Signal MOSFET from LESHAN RADIO COMPANY, LTD., designed for a variety of low-power applications. This device features ESD protection, low on-resistance (RDS(on)), and comes in a compact SOT883 surface mount package. It is suitable for use in low-side load switching, level shifting circuits, DC-DC converters, and portable electronic devices such as DSCs, PDAs, and cell phones. The material is Halogen Free and compliant with RoHS requirements.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Marking: L2N7002KN3T5G
  • Package: SOT883
  • Material Compliance: Halogen Free, RoHS compliant
  • Lead Finish: PbFree Device
  • Packaging: Tape & Reel (10000 units)

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Drain Current (Steady State, TA = 25°C) ID 320 mA
Drain Current (Steady State, TA = 85°C) ID 230 mA
Drain Current (Pulsed, t < 5 s, TA = 25°C) ID 380 mA
Drain Current (Pulsed, t < 5 s, TA = 85°C) ID 270 mA
Power Dissipation (Steady State) PD 250 mW
Pulsed Drain Current IDM (tp = 10 µs) 1.5 A
Operating Junction and Storage Temperature Range TJ, TSTG -55 +150 °C
Source Current (Body Diode) IS 300 mA
Lead Temperature for Soldering Purposes TL (1/8″ from case for 10 s) 260 °C
GateSource ESD Rating (HBM, Method 3015) ESD 2000 V
THERMAL CHARACTERISTICS
JunctiontoAmbient (Steady State) RθJA (Note 1) 500 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 60 V
DraintoSource Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 71 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V, TJ = 25°C 1 µA
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V, TJ = 125°C 500 nA
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 50 V, TJ = 25°C 100 nA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 µA
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 µA 1.0 2.5 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ -4.0 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.8 Ω
DraintoSource On Resistance RDS(on) VGS = 5.0 V, ID = 50 mA 2.5 Ω
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 80 S
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 25 V 32.8 pF
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 25 V 5.4 pF
Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 25 V 2.9 pF
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 10 V; ID = 200 mA 0.7 nC
Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V; ID = 200 mA 0.1 nC
GatetoSource Charge QGS VGS = 4.5 V, VDS = 10 V; ID = 200 mA 0.3 nC
GatetoDrain Charge QGD VGS = 4.5 V, VDS = 10 V; ID = 200 mA 0.1 nC
TurnOn Delay Time td(ON) VGS = 10 V, VDD = 10 V, ID = 500 mA 9.9 ns
Rise Time tr VGS = 10 V, VDD = 10 V, ID = 500 mA 5.0 ns
TurnOff Delay Time td(OFF) VGS = 10 V, VDD = 10 V, ID = 500 mA 39.4 ns
Fall Time tf VGS = 10 V, VDD = 10 V, ID = 500 mA 17.9 ns
Forward Diode Voltage VSD VGS = 0 V, IS = 115 mA, TJ = 25°C 1.4 V
Forward Diode Voltage VSD VGS = 0 V, IS = 115 mA, TJ = 85°C 0.7 V

1912111437_LRC-L2N7002KN3T5G_C383162.pdf

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