Compact DFN2020-6D package transistor LRC LRC6N33YT1G with epitaxial planar type and RoHS compliance
Key Attributes
Model Number:
LRC6N33YT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
22.8pF@25V
Pd - Power Dissipation:
-
Mfr. Part #:
LRC6N33YT1G
Package:
U-DFN2020-6D
Product Description
Product Overview
The LRC6N33YT1G is a general-purpose transistor featuring a Power MOSFET. It offers ESD protection up to 1500V and a high current capacity within a compact DFN2020-6D package. Its epitaxial planar type construction and low threshold voltage (0.9V to 1.5V) make it suitable for low voltage applications. This device is compliant with RoHS requirements and Halogen Free. Key applications include charging circuits and other power management functions in portable equipment.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Type: General Purpose Transistors with Power MOSFET
- Package: DFN2020-6D
- Construction: Epitaxial planar type
- Special Designation: S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| N MOSFET OFF CHARACTERISTICS | ||||||
| DrainSource Breakdown Voltage | VBRDSS | - | - | 300 | Vdc | VGS = 0, ID = 250Adc |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.1 | Adc | VGS = 0, VDS = 25 Vdc |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.5 | Adc | VGS = 0, VDS = 50 Vdc |
| GateBody Leakage Current, Forward | IGSSF | - | - | 10 | Adc | VGS = 20 Vdc |
| GateBody Leakage Current, Reverse | IGSSR | - | - | -10 | Adc | VGS = - 20 Vdc |
| N MOSFET ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(th) | 0.9 | - | 1.5 | Vdc | VDS = VGS, ID = 1.0mAdc |
| Static DrainSource OnState Resistance | RDS(on) | - | 5.6 | 10 | Ohms | VGS = 2.75 Vdc, ID < 200 mAdc |
| Static DrainSource OnState Resistance | RDS(on) | - | - | 22.8 | mOhms | VGS = 5.0 Vdc, ID = 200 mAdc |
| Forward Transconductance | gfs | - | 100 | - | mS | VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz |
| N MOSFET DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | - | 3.5 | - | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz |
| Output Capacitance | Coss | - | 3.5 | - | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz |
| Reverse Transfer Capacitance | Crss | - | 2.9 | - | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz |
| N MOSFET SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(on) | - | 3.8 | - | ns | VDD = 30 Vdc , VGEN = 10 V,RG =25 ,RL =60 ,ID =500 mAdc |
| Turn-Off Delay Time | td(off) | - | 19 | - | ns | VDD = 30 Vdc , VGEN = 10 V,RG =25 ,RL =60 ,ID =500 mAdc |
| PNP TRANSISTORS OFF CHARACTERISTICS | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | - | - | V | IC =-1.0mA |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | -5 | V | |
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | - | - | V | IC =-100 |
| Collector Cutoff Current | ICBO | - | - | -150 | nA | VCB =-35V |
| Emitter Cutoff Current | IEBO | - | - | -150 | nA | VEB =-4V |
| PNP TRANSISTORS ON CHARACTERISTICS | ||||||
| DC Current Gain | HFE | 60 | - | 135 | - | IC =-500mA,VCE =-2V |
| Collector-Emitter Saturation Voltage | VCE(S) | - | - | -0.5 | V | IC =-800mA,IB =-80mA |
| MAXIMUM RATINGS | ||||||
| Continuous Drain Current | ID | - | - | 200 | mAdc | Ta = 25C |
| Pulsed Drain Current | IDM | - | - | 800 | mAdc | (tp10s) |
| Continuous Collector Current | IC | - | - | -1500 | mAdc | Ta = 25C |
| Collector Current | IC | - | - | -1500 | mAdc | Pulsed (tp10s) |
| Base Current | IB | - | - | -200 | mA | Ta = 25C |
| GatetoSource Voltage Continuous | VGS | -20 | - | +20 | Vdc | |
| Junction and Storage Temperature | TJ,Tstg | -55 | - | +150 | C | |
| THERMAL CHARACTERISTICS | ||||||
| JunctiontoAmbient Steady State | RJA | - | - | 556 | C/W | (Note 1) FR4 = 1.00.750.062 in. |
| OUTLINE AND DIMENSIONS | ||||||
| Package Type | Min | Typ | Max | Unit | ||
| DFN2020-6D | 1.95 | 2.00 | 2.05 | mm | D | |
| DFN2020-6D | 1.95 | 2.00 | 2.05 | mm | E | |
| DFN2020-6D | 0.65 | 0.70 | 0.75 | mm | e | |
| DFN2020-6D | 0.25 | 0.30 | 0.35 | mm | b | |
| DFN2020-6D | 0.02 | 0.05 | - | mm | d | |
| DFN2020-6D | 0.65 | 1.00 | 1.05 | mm | L | |
| DFN2020-6D | 0.37 | 0.45 | - | mm | G1 | |
| DFN2020-6D | 0.65 | - | - | mm | Z | |
| DFN2020-6D | 0.95 | - | - | mm | D2 | |
| DFN2020-6D | 1.75 | - | - | mm | C | |
| DFN2020-6D | 1.00 | - | - | mm | X | |
| DFN2020-6D | 1.00 | - | - | mm | Y | |
| DFN2020-6D | 0.19 | - | - | mm | X1 | |
| DFN2020-6D | 0.152 | - | - | mm | Y1 | |
| DFN2020-6D | 0.60 | - | - | mm | A | |
| DFN2020-6D | - | - | - | mm | A1 | |
| DFN2020-6D | - | - | - | mm | A3 | |
| DFN2020-6D | - | - | - | mm | G | |
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Device Marking | LRC6N33YT1G | |||||
| Ordering Information | 3000/Tape&Reel | |||||
2410122030_LRC-LRC6N33YT1G_C172438.pdf
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