P Channel Power MOSFET LRC LP1488WT1G for portable equipment load switches and battery powered devices
Key Attributes
Model Number:
LP1488WT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 P-Channel
Output Capacitance(Coss):
41pF
Input Capacitance(Ciss):
400pF
Pd - Power Dissipation:
290mW
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
LP1488WT1G
Package:
SC-70(SOT323)
Product Description
Product Overview
The LP1488WT1G is a P-Channel Power MOSFET designed for power management applications. It is suitable for use in notebooks, portable equipment, battery-powered systems, load switches, and DSCs. This device complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Device Type: P-Channel Power MOSFET
- Package Type: SC70 (SOT-323)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| Drain-Source voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | -1.4 | -1.5 | A | ||
| Pulse Drain Current @Tp=10s | IDM | -3.0 | A | |||
| Thermal Characteristics | ||||||
| Power Dissipation FR−4 Board @ TA = 25ºC | PD | 0.29 | W | |||
| Power Dissipation FR−4 Board @ TA = 70ºC | PD | 0.19 | W | |||
| Thermal Resistance, Junction–to–Ambient | RΘJA | 430 | ºC/W | |||
| Junction and Storage temperature | TJ,Tstg | -55 | +150 | ºC | ||
| Electrical Characteristics (Ta= 25ºC) | ||||||
| Drain–Source Voltage | V(BR)DSS | -20 | V | |||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | |||
| Gate–body Leakage Current | IGSS | ±100 | nA | |||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | V | ||
| Static Drain–Source On resistance | RDS(ON) | 90 | 110 | 150 | mΩ | |
| Static Diode Forward Voltage | VSD | -0.79 | -1.5 | V | ||
| Input Capacitance | Ciss | 400 | pF | |||
| Output Capacitance | Coss | 12 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | 4 | nC | |||
| Gate Source Charge | Qgs | 0.6 | nC | |||
| Gate Drain Charge | Qgd | 0.85 | nC | |||
| Turn–On Delay Time | td(on) | 11 | ns | |||
| Turn–On Rise Time | tr | 30 | ns | |||
| Turn–Off Delay Time | td(off) | 18 | ns | |||
| Turn–Off Fall Time | tf | 30 | ns | |||
| Maximum Body–diode Continuous Current | IS | -1 | A | |||
| Body–diode Reverse Recovery Time | trr | 12 | ns | |||
| Body–diode Reverse Recovery Charge | Qrr | 30 | nC | |||
| Dynamic Gate Resistance | Rg | 12 | Ω | |||
| Device Marking | ||||||
| Device Marking | LP1488WT1G | |||||
| Outline and Dimensions (SC70) | ||||||
| Dimension | MIN | NOR | MAX | REF | Unit | |
| A | 0.80 | 0.95 | 1.00 | mm | ||
| A1 | 0.00 | 0.05 | 0.10 | mm | ||
| A2 | 0.30 | 0.35 | 0.40 | mm | ||
| b | 0.10 | 0.15 | 0.25 | mm | ||
| c | 0.10 | 0.15 | 0.25 | mm | ||
| D | 1.80 | 2.05 | 2.20 | mm | ||
| E | 1.15 | 1.30 | 1.35 | mm | ||
| He | 2.00 | 2.10 | 2.40 | mm | ||
| e | 1.20 | 1.30 | 1.40 | mm | ||
| e1 | 0.20 | 0.35 | 0.56 | 0.65 | BSC | |
| L | 0.70 | 0.90 | mm | |||
2108071830_LRC-LP1488WT1G_C2842090.pdf
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