Power Management Solution LRC LN2316ELT1G N Channel 20V MOSFET with RoHS Compliance and Halogen Free
Key Attributes
Model Number:
LN2316ELT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.4A
RDS(on):
17mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
150pF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
LN2316ELT1G
Package:
SOT-23
Product Description
Product Overview
The LN2316ELT1G is an N-Channel 20V (D-S) MOSFET with ESD Protection, designed for efficient power management. It features an extremely low RDS(ON) due to its super high density cell design, offering exceptional on-resistance and maximum DC current capability. This device is compliant with RoHS requirements and Halogen Free. It is suitable for applications such as power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Device Marking: N16
- Package Type: SOT23 (TO-236AB)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| DrainSource Voltage | VDSS | 20 | V | |||
| GatetoSource Voltage Continuous | VGS | 8 | V | |||
| Continuous Drain Current | ID | TA =25 | 6.4 | A | ||
| ID | TA =70 | 5.1 | A | |||
| Pulsed Drain Current | IDM | 26 | A | |||
| Maximum Power Dissipation | PD | TA =25 | 1.1 | W | ||
| PD | TA =70 | 0.7 | W | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient (Note 1) | RJA | 110 | /W | |||
| Thermal Resistance-Junction to Case | RJC | 80 | /W | |||
| Electrical Characteristics (Ta= 25C) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 A | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID = 250 A | 1 | 1.4 | V | |
| Gate Leakage Current | IGSS | VDS = 0 V, VGS = 4.5 V | 1 | A | ||
| IGSS | VDS = 0 V, VGS = 8 V | 10 | A | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20 V, VGS = 0 V | 1 | A | ||
| Drain-Source On-Resistance | RDS(ON) | VGS = 4.5 V, ID = 6.5 A | 25 | m | ||
| RDS(ON) | VGS = 2.5 V, ID = 5.5 A | 29 | m | |||
| RDS(ON) | VGS = 1.8 V, ID = 5 A | 42 | m | |||
| Diode Forward Voltage | VSD | IS = 1 A, VGS = 0 V | 0.6 | V | ||
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 10 V, VGS = 4.5 V, ID = 6.5 A | 17 | nC | ||
| Gate-Source Charge | Qgs | 1 | nC | |||
| Gate-Drain Charge | Qgd | 1 | nC | |||
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0 V, f= 1MHz | 3700 | pF | ||
| Output Capacitance | Coss | 3950 | pF | |||
| Reverse Transfer Capacitance | Crss | 420 | pF | |||
| Turn-On Delay Time | td(on) | VDS = 10 V, RL = 1.5 ,VGS = 5 V, RGEN = 3 | 3 | ns | ||
| Turn-On Rise Time | tr | 10 | ns | |||
| Turn-Off Delay Time | td(off) | 150 | ns | |||
| Turn-Off Fall Time | tf | 95 | ns | |||
| Outline and Dimensions | ||||||
| Dimension | Symbol | MIN | NOM | MAX | Unit | |
| A | 0.89 | 1.12 | mm | |||
| A1 | 0.01 | 0.10 | mm | |||
| A2 | 0.88 | 0.95 | 1.02 | mm | ||
| b | 0.30 | 0.50 | mm | |||
| b1 | 0.30 | 0.40 | 0.45 | mm | ||
| c | 0.08 | 0.20 | mm | |||
| c1 | 0.08 | 0.10 | 0.16 | mm | ||
| D | 2.80 | 2.90 | 3.04 | mm | ||
| E | 2.10 | 2.64 | mm | |||
| E1 | 1.20 | 1.30 | 1.40 | mm | ||
| e | 0.95BSC | mm | ||||
| e1 | 1.90BSC | mm | ||||
| L | 0.40 | 0.46 | 0.60 | mm | ||
| L1 | 0.54REF | mm | ||||
| 0 | 8 | |||||
2504101957_LRC-LN2316ELT1G_C383243.pdf
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