LRC S LBSS84LT1G P Channel Power MOSFET with Low On Resistance and Halogen Free Material Compliance

Key Attributes
Model Number: S-LBSS84LT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@5.0V,100mA
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
2.7pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
38pF@15V
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
S-LBSS84LT1G
Package:
SOT-23
Product Description

Product Overview

The LBSS84LT1G and S-LBSS84LT1G are P-Channel Power MOSFETs designed for automotive and general applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen Free, offering energy efficiency. They are suitable for applications where reliable switching and low on-resistance are critical.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification (S-prefix): AEC-Q101 qualified
  • Capability (S-prefix): PPAP capable
  • Package Type: SOT-23 (TO-236)

Technical Specifications

Model Description Symbol Min. Typ. Max. Unit
LBSS84LT1G, S-LBSS84LT1G Drain-Source Voltage VDSS -50 V
Gate-to-Source Voltage - Continuous VGS 20 V
Continuous Drain Current ID -130 mA
LBSS84LT1G Power MOSFET
S-LBSS84LT1G Power MOSFET
LBSS84LT1G 130 mA, 50V PChannel
LBSS84LT1G, S-LBSS84LT1G Pulsed Drain Current IDM -520 mA
Total Device Dissipation, FR5 Board (Note 1) @ TA = 25C PD 1.8 W
Derate above 25C 14.5 mW/C
LBSS84LT1G, S-LBSS84LT1G Thermal Resistance, JunctiontoAmbient (Note 1) RJA 556 C/W
Junction and Storage temperature TJ,Tstg -55 +150 C
Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 C
LBSS84LT1G, S-LBSS84LT1G Drain-Source Breakdown Voltage (VGS = 0, ID = -250A) VBRDSS -50 V
Zero Gate Voltage Drain Current (VGS = 0, VDS = -25 V) IDSS -0.1 A
Zero Gate Voltage Drain Current (VGS = 0, VDS = -50 V) IDSS -1 A
Zero Gate Voltage Drain Current (VGS = 0, VDS = -50 V,TJ=125C) IDSS -10 A
GateBody Leakage Current, Forward (VGS = 20V) IGSSF 10 A
GateBody Leakage Current, Reverse (VGS = - 20V) IGSSR -10 A
LBSS84LT1G, S-LBSS84LT1G Gate Threshold Voltage (VDS = VGS, ID = -250A) VGS(th) -0.8 -2 V
Static DrainSource OnState Resistance (VGS = -5.0 V, ID = -100 mA) RDS(on) 1.8 2.6
Static DrainSource OnState Resistance (VGS = -10 V, ID = -100 mA) RDS(on) 1.5 2
LBSS84LT1G, S-LBSS84LT1G Transfer Admittance (VDS = -25 V, ID = -100 mA, f = 1.0 kHz) |yfs| 50 mS
Input Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Ciss 38 pF
Output Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Coss 4.8 pF
LBSS84LT1G, S-LBSS84LT1G Reverse Transfer Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Crss 2.7 pF
Turn-On Delay Time (VDS = 15 V,VGS=-10V ,RL = 50,RG=25) td(on) 17.9 ns
LBSS84LT1G, S-LBSS84LT1G Rise Time (VDS = 15 V,VGS=-10V ,RL = 50,RG=25) tr 5.3 ns
Turn-Off Delay Time (VDS = 15 V,VGS=-10V ,RL = 50,RG=25) td(off) 16.7 ns
Fall Time (VDS = 15 V,VGS=-10V ,RL = 50,RG=25) tf 8.6 ns
Continuous Source-Drain Diode Current IS -130 mA
LBSS84LT1G, S-LBSS84LT1G Pulsed Source-Drain Diode Current ISM -520 mA
Diode Forward Voltage (VSD = 15 V,VGS=-10V ,RL = 50,RG=25) VSD -0.52 -1.2 V
LBSS84LT1G Shipping 3000/Tape&Reel
LBSS84LT3G Shipping 10000/Tape&Reel
Dimension Millimeters (MIN) Millimeters (NOM) Millimeters (MAX) Inches (MIN) Inches (NOM) Inches (MAX)
A 0.89 1 1.11 0.035 0.04 0.044
A1 0.01 0.06 0.1 0.001 0.002 0.004
b 0.37 0.44 0.5 0.015 0.018 0.02
c 0.13 0.15 0.18 0.005 0.006 0.007
D 2.80 2.9 3.04 0.11 0.114 0.12
E 2.10 2.4 2.64 0.083 0.094 0.104
e 0.95 0.037
HE 2.10 2.4 2.64 0.083 0.094 0.104
L 0.35 0.44 0.54 0.014 0.018 0.021
L1 0.10 0.12 0.14 0.004 0.005 0.006

2006151233_LRC-S-LBSS84LT1G_C559093.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.