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quality N Channel MOSFET LRC LN8340DT1AG with 12.2 Amp Continuous Drain Current and RoHS Compliance factory
quality N Channel MOSFET LRC LN8340DT1AG with 12.2 Amp Continuous Drain Current and RoHS Compliance factory

N Channel MOSFET LRC LN8340DT1AG with 12.2 Amp Continuous Drain Current and RoHS Compliance

Key Attributes
Model Number: LN8340DT1AG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
17A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V,12.8A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
118pF
Number:
1 N-channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
1.407nF
Pd - Power Dissipation:
3.5W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
LN8340DT1AG
Package:
DFN-8(3x3)
Product Description

Product Overview

The LN8340DT1AG is an N-Channel 30-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This device is Halogen Free and compliant with RoHS requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: Halogen Free, RoHS compliant
  • Type: N-Channel MOSFET

Technical Specifications

Parameter Symbol Unit LN8340DT1AG Notes
Drain-to-Source Voltage VDSS V 30
Gate-to-Source Voltage VGS V 20
Continuous Drain Current ID A 12.2 (Note 1) TA = 25C
Continuous Drain Current ID A 4.6 (Note 1) TA = 70C
Pulsed Drain Current IDM A 60 (Note 2)
Continuous Source Current (Diode Conduction) IS A 12.2 (Note 1)
Power Dissipation PD W 3.5 (Note 1) TA = 70C
Power Dissipation PD W (Note 1) TA = 25C (Implied from graph)
Operating Junction Temperature TJ -55 ~ +150
Storage Temperature Range Tstg -55 ~ +150
Maximum Junction-to-Ambient Thermal Resistance RJA /W 81 (Note 1) TA = 25C, t 10s Steady State
Maximum Junction-to-Ambient Thermal Resistance RJA /W 35 (Note 1) TA = 70C, t 10s Steady State
Gate-Source Threshold Voltage VGS(th) V 2 (VDS = VGS, ID = 250 uA)
Gate-Body Leakage IGSS nA 100 (VDS = 0 V, VGS = 20 V)
Zero Gate Voltage Drain Current IDSS A 25 (VDS = 24 V, VGS = 0 V, TJ = 55C)
Zero Gate Voltage Drain Current IDSS A 25 (VDS = 24 V, VGS = 0 V)
On-State Drain Current ID(on) A 12.8 (VDS = 5 V, VGS = 10 V) (Note 3)
Drain-Source On-Resistance RDS(on) m 9 (VGS = 10 V, ID = 12.8 A) (Note 3)
Drain-Source On-Resistance RDS(on) m 15 (VGS = 4.5 V, ID = 10.3 A) (Note 3)
Forward Transconductance gfs S 11 (VDS = 15 V, ID = 12.8 A) (Note 3)
Diode Forward Voltage VSD V 0.78 (IS = 2.3 A, VGS = 0 V) (Note 3)
Total Gate Charge Qg nC 10 (Note 4)
Gate-Source Charge Qgs nC 5.2 (Note 4)
Gate-Drain Charge Qgd nC 3.7 (Note 4)
Input Capacitance Ciss pF 160 (VDS = 15 V, VGS = 0 V, f = 1 Mhz) (Note 4)
Output Capacitance Coss pF 118 (VDS = 15 V, VGS = 0 V, f = 1 Mhz) (Note 4)
Reverse Transfer Capacitance Crss pF 11.5 (VDS = 15 V, VGS = 0 V, f = 1 Mhz) (Note 4)
Turn-On Delay Time td(on) ns 6 (VDS = 15 V, ID = 12.8 A, VGEN = 10 V, RGEN = 6 ) (Note 4)
Rise Time tr ns 6 (VDS = 15 V, ID = 12.8 A, VGEN = 10 V, RGEN = 6 ) (Note 4)
Turn-Off Delay Time td(off) ns 28 (VDS = 15 V, ID = 12.8 A, VGEN = 10 V, RGEN = 6 ) (Note 4)
Fall Time tf ns 8 (VDS = 15 V, ID = 12.8 A, VGEN = 10 V, RGEN = 6 ) (Note 4)
Marking N40
Shipping 3000/Tape&Reel
Package Type DFN3030-8B

Notes:

  • 1. Surface Mounted on 1 x 1 FR4 Board.
  • 2. Pulse width limited by maximum junction temperature.
  • 3. Pulse test: PW 300s, duty cycle 2%.
  • 4. Guaranteed by design, not subject to production testing.

2410010101_LRC-LN8340DT1AG_C284873.pdf

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