IGBT luxin-semi YGW40N65F1A2 650V 40A for high speed switching and operation in power conversion systems
Key Attributes
Model Number:
YGW40N65F1A2
Product Custom Attributes
Td(off):
120ns
Pd - Power Dissipation:
188W
Td(on):
45ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
40pF
Input Capacitance(Cies):
2.1nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
90nC@15V
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
100pF
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
400uJ
Turn-On Energy (Eon):
2mJ
Mfr. Part #:
YGW40N65F1A2
Package:
TO-247
Product Description
Product Overview
The YGW40N65F1A2 is a 650V / 40A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, enhanced ruggedness, temperature stability, and low VCEsat. Its positive temperature coefficient in VCEsat simplifies parallel switching. This IGBT is suitable for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Packaging: TO247 Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current | IC | 80 / 40 | A | TC = 25C / TC = 100C |
| Diode Forward current | IF | 80 / 40 | A | TC = 25C / TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Pulse collector current | ICM | 120 | A | VGE =15V, tp limited by Tjmax |
| Power dissipation | Ptot | 188 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+150 | C | |
| Soldering temperature, wave soldering | 260 | C | 1.6mm (0.063in.) from case for 10s | |
| Mounting torque, M3 screw | 0.6 | Nm | Maximum of mounting processes | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.3 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Static Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V , IC=250uA |
| Gate Threshold Voltage | VGE(th) | 4.0 / 4.9 / 5.6 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.60 / 2.40 | V | VGE=15V, IC=40A, Tj = 25C / Tj = 175C |
| Zero gate voltage collector current | ICES | 0.1 / 4000 | A | VCE = 650V, VGE = 0V, Tj = 25C / Tj = 175C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE = 20V, IC = 40A |
| Input capacitance | Cies | 2100 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 100 | pF | |
| Reverse transfer capacitance | Cres | 40 | pF | |
| Gate charge | QG | 90 | nC | VCC = 520V, IC = 40A, VGE = 15V |
| Turn-on Delay Time | td(on) | 45 | ns | Tj=25C, VCC = 400V, IC = 40.0A, VGE = 0.0/15.0V, Rg=20 |
| Rise Time | tr | 80 | ns | |
| Turn-off Delay Time | td(off) | 120 | ns | |
| Fall Time | tf | 75 | ns | |
| Turn-on Energy | Eon | 2.0 | mJ | |
| Turn-off Energy | Eoff | 0.4 | mJ | |
| Diode Forward Voltage | VFM | 1.95 / 2.45 | V | IF = 40A, Tj= 25 |
| Reverse Recovery Time | Trr | 50 | ns | IF= 40A, VR = 400V, di/dt= 400A/s |
| Reverse Recovery Current | Irr | 10 | A | |
| Reverse Recovery Charge | Qrr | 270 | nC |
2410121307_luxin-semi-YGW40N65F1A2_C4153736.pdf
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