Power Management N Channel MOSFET LRC S LNB2306ELT1G Featuring Low On Resistance and ESD Protection
Key Attributes
Model Number:
S-LNB2306ELT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
80mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
370pF@15V
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
S-LNB2306ELT1G
Package:
SOT-23LC
Product Description
Product Overview
The S-LNB2306ELT1G is an N-Channel 30V (D-S) MOSFET featuring ESD protection. It is designed with a super high density cell structure for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in notebooks, portable equipment, and load switches. The material of the product complies with RoHS requirements and is Halogen Free. The S- prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model: S-LNB2306ELT1G
- Channel Type: N-Channel
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (for S- prefix)
- PPAP Capable: Yes (for S- prefix)
- ESD Protected: Yes
Technical Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. | Notes |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDS | V | 30 | |||
| GatetoSource Voltage | VGSS | V | 20 | |||
| Continuous Drain Current | ID | A | 4 (TA=25) | 3 (TA=70) | Note 1 | |
| Pulsed Drain Current | IDM | A | 18 | TA =25 | ||
| Maximum Power Dissipation | PD | W | 0.9 (TA=25) | 0.65 (TA=70) | Note 1 | |
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | /W | 90 | Note 1 | ||
| Gate Threshold Voltage | VGS(th) | V | 2.1 | - | (VDS =VGS , ID =250A) | |
| Gate Leakage Current | IGSS | A | - | 10 | (VDS =0V, VGS =16V) | |
| Zero Gate Voltage Drain Current | IDSS | A | - | - | 1 | (VDS =30V, VGS =0V) |
| Drain-Source On-Resistance | RDS(ON) | m | - | 35 | 50 | (VGS =10V, ID = 6.7A) |
| Drain-Source On-Resistance | RDS(ON) | m | - | 48 | 80 | (VGS =4.5V, ID = 5.0A) |
| Diode Forward Voltage | VSD | V | - | 0.8 | 1.2 | (IS =1.7A, VGS =0V) |
| Input Capacitance | Ciss | pF | - | 370 | - | (VDS =15V, VGS =0V, f=1MHz) |
| Output Capacitance | Coss | pF | - | 21 | - | (VDS =15V, VGS =0V, f=1MHz) |
| Reverse Transfer Capacitance | Crss | pF | - | 12 | - | (VDS =15V, VGS =0V, f=1MHz) |
| Total Gate Charge | Qg | nC | - | 13 | - | (VDS =15V, VGS =10V, ID =6.7A) |
| Gate-Source Charge | Qgs | nC | - | 5.7 | - | |
| Gate-Drain Charge | Qgd | nC | - | 1.9 | - | |
| Gate Resistance | Rg | - | 1 | - | (f=1MHz) | |
| Turn-On Delay Time | td(on) | ns | - | 33 | - | (VDD =15V, RL =15,ID =1.0A, VGEN =10V,RG =6) |
| Turn-On Rise Time | tr | ns | - | 5.7 | - | |
| Turn-Off Delay Time | td(off) | ns | - | 1.9 | - | |
| Turn-Off Fall Time | tf | ns | - | 1 | - | |
| Device Marking | S-LNB2306ELT1G | |||||
| Shipping | 3000/Tape&Reel | |||||
| Package Type | SOT23-LC | |||||
| Dimensions (SOT23-LC) | mm | MIN | NOR | MAX | ||
| A | mm | 0.90 | 1.00 | 1.10 | ||
| B | mm | 0.95 | 0.95 | |||
| C | mm | 0.95 | 0.95 | |||
| D | mm | 2.80 | 2.90 | 3.00 | ||
| E | mm | 1.50 | 1.60 | 1.70 | ||
| e | mm | 1.80 | 1.90 | 2.00 | ||
| HE | mm | 2.60 | 2.80 | 3.00 | ||
| L | mm | 0.20 | 0.40 | 0.60 | ||
| L1 | mm | 0.60 | REF | |||
| A1 | mm | 0.01 | 0.06 | 0.10 | ||
| b | mm | 0.30 | 0.40 | 0.50 | ||
| c | mm | 0.10 | 0.17 | 0.20 | ||
| 0 | - | 10 |
2201121800_LRC-S-LNB2306ELT1G_C2936707.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
