NPN transistor luJing 2N5401 designed for high voltage switching and low current amplification tasks
Key Attributes
Model Number:
2N5401
Product Custom Attributes
Mfr. Part #:
2N5401
Package:
TO-92
Product Description
Product Overview
The ON Semiconductor 2N540 is a general-purpose NPN transistor designed for switching and amplification in high-voltage applications. It features low current (max 200mA) and high voltage (max 150V) capabilities, making it suitable for applications such as telephony. The TO-92 plastic-encapsulated transistor can be mounted in any position.
Product Attributes
- Brand: ON Semiconductor
- Model: 2N540
- Package: TO-92 Plastic-Encapsulate Transistors
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector Base Voltage | VCBO | 150 | V | |||
| Collector Emitter Voltage | VCEO | 150 | V | |||
| Emitter Base Voltage | VEBO | 6.0 | V | |||
| Collector Current | IC | 200 | mA | |||
| Collector Power Dissipation | PC | @ TA = 25C | 625 | mW | ||
| Thermal Resistance, Junction to Ambient | RJA | 200 | C/W | |||
| Junction Temperature | Tj | 150 | C | |||
| Storage Temperature | Tstg | -65 | +150 | C | ||
| Collector Base Breakdown Voltage | VBRCBO | IC = 10 A, IE = 0 | 150 | V | ||
| Collector Emitter Breakdown Voltage | VBRCEO | IC = 10 mA, IB = 0 | 150 | V | ||
| Emitter Base Breakdown Voltage | VBREBO | IE = 10 A, IC = 0 | 6.0 | V | ||
| Collector Cutoff Current | ICBO | 10 | nA | |||
| Emitter Cutoff Current | IEBO | VEB = 5 V, IC = 0 | 10 | nA | ||
| Collector Emitter Saturation Voltage | VCE(sat) | IC = 100 mA, IB = 10 mA | 1.0 | V | ||
| Base Emitter Saturation Voltage | VBE(sat) | IC = 100 mA, IB = 10 mA | 1.2 | V | ||
| Transition Frequency | fT | VCE = 10 V, IC = 10 mA | 100 | MHz | ||
| DC Current Gain | hFE | VCE = 10 V, IC = 10 mA | 100 | |||
| DC Current Gain | hFE | VCE = 10 V, IC = 10 mA |
2512021845_luJing-2N5401_C53058832.pdf
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