Power MOSFET MCC MCQ12N06 TP Featuring Split Gate Trench Technology and UL 94 V0 Flammability Rating

Name: Power MOSFET MCC MCQ12N06 TP Featuring Split Gate Trench Technology and UL 94 V0 Flammability Rating
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MCQ12N06-TP
Availability: InStock

Key Attributes

Model Number: MCQ12N06-TP

Product Custom Attributes

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

12A

Operating Temperature -:

-55℃~+150℃

RDS(on):

8.2mΩ@10V,12A

Gate Threshold Voltage (Vgs(th)):

1.1V

Reverse Transfer Capacitance (Crss@Vds):

Number:

1 N-channel

Pd - Power Dissipation:

3.1W

Input Capacitance(Ciss):

1.988nF@30V

Gate Charge(Qg):

31nC@10V

Mfr. Part #:

MCQ12N06-TP

Package:

SOP-8

Product Description

Product Overview

The MCQ12N06 is an N-Channel Power MOSFET featuring Split Gate Trench Power MV MOSFET Technology. It offers low gate charge and is designed to meet UL 94 V-0 flammability rating. This device is Moisture Sensitivity Level 1 and Halogen Free, designated as a "Green" device. It is lead-free and RoHS compliant. The MCQ12N06 is suitable for applications requiring efficient power switching and control.

Product Attributes

Brand: MCCSEMI
Technology: Split Gate Trench Power MV MOSFET
Flammability Rating: UL 94 V-0
Moisture Sensitivity Level: 1
Environmental Compliance: Halogen Free (Green Device), Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
Drain-Source Voltage	VDS	60	V	VGS=0V
Gate-Source Voltage	VGS	±20	V
Drain Current-Continuous	ID	12	A
Drain Current-Pulse	IDM	48	A	Note 2
Power Dissipation	PD	3.1	W
Operating Junction Temperature Range	TJ	-55 to +150	°C
Storage Temperature Range	TSTG	-55 to +150	°C
Maximum Thermal Resistance (Junction to Ambient)	θJA	40	°C/W
Drain-Source Breakdown Voltage	V(BR)DSS	60	V	VGS=0V, ID=250µA
Gate-Threshold Voltage	VGS(th)	1.1 - 2.5	V	VDS=VGS, ID=250µA
Gate-Body Leakage Current	IGSS	±100	nA	VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current	IDSS	1	µA	VDS = 60V, VGS = 0V
Forward Tranconductance	gFS	30	S	VDS=5V, ID=12A
Diode Forward Voltage	VSD	0.99	V	VGS=0V, IS=12A
Input Capacitance	Ciss	1988	pF	VDS=30V,VGS=0V, f=1MHz
Output Capacitance	Coss	470	pF	VDS=30V,VGS=0V, f=1MHz
Reverse Transfer Capacitance	Crss	14	pF	VDS=30V,VGS=0V, f=1MHz
Turn-On Delay Time	td(on)	10.5	ns	VGS=10V,VDS=15V, RGEN=3Ω,RL=2.5Ω
Turn-On Rise Time	tr	4.5	ns	VGS=10V,VDS=15V, RGEN=3Ω,RL=2.5Ω
Turn-Off Delay Time	td(off)	29.5	ns	VGS=10V,VDS=15V, RGEN=3Ω,RL=2.5Ω
Turn-Off Fall Time	tf	8.0	ns	VGS=10V,VDS=15V, RGEN=3Ω,RL=2.5Ω
Total Gate Charge (10V)	Qg	31	nC	VGS=10V, VDS=30V, ID=12A
Total Gate Charge (4.5V)	Qg	16	nC	VGS=4.5V, VDS=30V, ID=12A
Gate-Source Charge	Qgs	6.0	nC
Gate-Drain Charge	Qgd	5.0	nC
Drain-Source On-Resistance	RDS(on)	0.83	mΩ	VGS=10V, ID=12A
Drain-Source On-Resistance	RDS(on)	1.27	mΩ	VGS=4.5V, ID=12A
Maximum Body-Diode Continuous Current	IS	12	A	TJ=55°C
Body Diode Reverse Recovery Time	trr	17	ns	IF=12A,di/dt=500A/µs
Body Diode Reverse Recovery Charge	Qrr	58	nC	IF=12A,di/dt=500A/µs

Dimensions (SOP-8):

DIM	INCHES	MM
A	0.053 - 0.069	1.35 - 1.75
B	0.004 - 0.010	0.10 - 0.25
C	0.053 - 0.061	1.35 - 1.55
D	0.013 - 0.020	0.33 - 0.51
E	0.007 - 0.010	0.17 - 0.25
F	0.185 - 0.200	4.70 - 5.10
G	0.228 - 0.244	5.80 - 6.20
H	0.150 - 0.157	3.80 - 4.00
J	0.016 - 0.050	0.40 - 1.27
K	0° - 8°	0° - 8°

Suggested Solder Pad Layout: 1.27mm, 0.80mm, 1.50mm, 6.50mm, 4.61mm

Internal Structure and Marking Code: Q12N06, MCCSEMI.COM

Ordering Information:

Device	Packing	Part Number
MCQ12N06	Tape&Reel: 4Kpcs/Reel	MCQ12N06-TP

2410121947_MCC-MCQ12N06-TP_C5353396.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.