P Channel MOSFET MCC MCAC25P10YHE3 TP with Continuous Drain Current 70A and ±20V Gate Source Voltage
Key Attributes
Model Number:
MCAC25P10YHE3-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
RDS(on):
55mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
20pF@50V
Number:
1 P-Channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.2nF@50V
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MCAC25P10YHE3-TP
Package:
DFN5060
Product Description
Product Overview
The MCAC25P10YHE3 is a P-CHANNEL MOSFET featuring Split Gate Trench MOSFET Technology, designed for excellent heat dissipation and high-density cell design for low RDS(ON). This AEC-Q101 Qualified device is Halogen Free, RoHS Compliant, and meets UL 94 V-0 flammability rating. It is suitable for applications requiring reliable performance and efficient thermal management.
Product Attributes
- Brand: MCC
- Model: MCAC25P10YHE3
- Technology: Split Gate Trench MOSFET
- Qualification: AEC-Q101
- Environmental: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant
- Flammability Rating: Epoxy Meets UL 94 V-0
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 70 | A | |||
| Pulsed Drain Current | IDM | (3) | A | |||
| Total Power Dissipation | PD | (4) | W | |||
| Single Pulsed Avalanche Energy | EAS | (5) | 162 | mJ | ||
| Operating Junction Temperature Range | -55 | +150 | °C | |||
| Storage Temperature Range | -55 | +150 | °C | |||
| Thermal Resistance Junction to Ambient (t≤10s) | RθJA | (2) | 20 | °C/W | ||
| Thermal Resistance Junction to Ambient (Steady-State) | RθJA | (2) | 50 | °C/W | ||
| Thermal Resistance Junction to Case (Steady-State) | RθJC | (2) | 1.8 | °C/W | ||
| Electrical Characteristics @ 25°C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250µA | -100 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -1 | -1.7 | -2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-20A | 42 | 55 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-10A | 45 | 60 | mΩ | |
| Continuous Body Diode Current | IS | -25 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-10A | -1.2 | V | ||
| Diode Characteristics | ||||||
| Reverse Recovery Time | trr | IS=-12.5A,di/dt=100A/µs | 100 | ns | ||
| Reverse Recovery Charge | Qrr | 280 | nC | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-50V,VGS=-10V,ID=-12.5A | 2200 | pF | ||
| Output Capacitance | Coss | VDS=-50V, ID=-12.5A | 220 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=-10V, RG=6Ω | 20 | pF | ||
| Total Gate Charge | Qg | 40 | nC | |||
| Gate-Source Charge | Qgs | 8 | nC | |||
| Gate-Drain Charge | Qg | 9 | nC | |||
| Turn-On Delay Time | td(on) | 15 | ns | |||
| Turn-On Rise Time | tr | 40 | ns | |||
| Turn-Off Delay Time | td(off) | 105 | ns | |||
| Turn-Off Fall Time | tf | 110 | ns | |||
| Dimensions (DFN5060) | A | 0.80 | 1.20 | mm | ||
| Dimensions (DFN5060) | B | 4.90 | 5.64 | mm | ||
| Dimensions (DFN5060) | C | 5.90 | 6.35 | mm | ||
| Dimensions (DFN5060) | D | 3.75 | 4.25 | mm | ||
| Dimensions (DFN5060) | E | 3.20 | 3.92 | mm | ||
| Dimensions (DFN5060) | F | 4.80 | 5.40 | mm | ||
| Dimensions (DFN5060) | G | 5.65 | 6.06 | mm | ||
| Dimensions (DFN5060) | H | 1.15 | 1.50 | mm | ||
| Dimensions (DFN5060) | K | 0.30 | 0.50 | mm | ||
| Dimensions (DFN5060) | J | 1.17 | 1.37 | mm | ||
| Dimensions (DFN5060) | L | 0.30 | 0.71 | mm | ||
| Dimensions (DFN5060) | M | 0.40 | 0.71 | mm | ||
| Dimensions (DFN5060) | N | 0.010 | 0.254 TYP. | inch/mm | ||
2411220701_MCC-MCAC25P10YHE3-TP_C6666237.pdf
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