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quality Single N Channel Trench MOSFET MagnaChip Semicon MDP14N050TH with MV MOSFET Technology Package TO 220 factory
quality Single N Channel Trench MOSFET MagnaChip Semicon MDP14N050TH with MV MOSFET Technology Package TO 220 factory

Single N Channel Trench MOSFET MagnaChip Semicon MDP14N050TH with MV MOSFET Technology Package TO 220

Key Attributes
Model Number: MDP14N050TH
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
193A
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.9V
Reverse Transfer Capacitance (Crss@Vds):
27pF
Output Capacitance(Coss):
923pF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
9.267nF
Gate Charge(Qg):
123nC@10V
Mfr. Part #:
MDP14N050TH
Package:
TO-220
Product Description

Product Overview

The MDP14N050TH is a single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., representing their latest generation of MV MOSFET Technology. It offers high performance with exceptionally low Rds(on), fast switching capabilities, and excellent quality. This MOSFET is suitable for industrial applications including low power drives for e-bikes, light electric vehicles, DC/DC converters, and general-purpose applications.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Product Line: MDP14N050TH
  • Technology: MV MOSFET Technology
  • Package: TO-220
  • Certifications: Halogen Free, RoHS Status
  • Operating Temperature: -55~175 C

Technical Specifications

Characteristic Symbol Rating Unit Test Condition
Absolute Maximum Ratings
Drain-Source Voltage VDSS 135 V (TJ = 25 C)
Gate-Source Voltage VGSS ±20 V (TJ = 25 C)
Continuous Drain Current (Silicon Limited) ID 193 A TC=25C
Continuous Drain Current (Silicon Limited) ID 136 A TC=100C
Continuous Drain Current (Package Limited) ID 120 A TC=25C
Pulsed Drain Current IDM 480 A (2)
Power Dissipation PD 375 W TC=25C
Power Dissipation PD 187 W TC=100C
Single Pulse Avalanche Energy EAS 450 mJ (3)
Junction and Storage Temperature Range TJ, Tstg -55~175 C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W (1)
Thermal Resistance, Junction-to-Case RθJC 0.4 C/W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 135 V ID = 250µA, VGS = 0V
Gate Threshold Voltage VGS(th) 2.5 3.9 V VDS = VGS, ID = 250µA
Drain Cut-Off Current IDSS - 1.0 µA VDS = 135V, VGS = 0V
Gate Leakage Current IGSS - ±0.1 µA VGS = ±20V, VDS = 0V
Drain-Source ON Resistance RDS(ON) - 5.0 mΩ VGS = 10V, ID = 50A
Drain-Source ON Resistance RDS(ON) - 4.2 mΩ VGS = 10V, ID = 50A (Typ)
Forward Transconductance gfs - 122 S VDS = 10V, ID = 50A
Dynamic Characteristics
Total Gate Charge Qg - 123 nC VDS = 70V, ID = 50A, VGS = 10V
Gate-Source Charge Qgs - 41 nC
Gate-Drain Charge Qgd - 22 nC
Input Capacitance Ciss - 9,267 pF VDS = 70V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss - 27 pF
Output Capacitance Coss - 923 pF
Turn-On Delay Time td(on) - 36 ns VGS = 10V, VDS = 70V, ID = 50A , RG = 3.0Ω
Rise Time tr - 21 ns
Turn-Off Delay Time td(off) - 83 ns
Fall Time tf - 13 ns
Gate Resistance Rg - 3 Ω f= 1 MHz
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD - 1.2 V IS = 50A, VGS = 0V
Source-Drain Diode Forward Voltage VSD - 0.9 V IS = 50A, VGS = 0V (Typ)
Body Diode Reverse Recovery Time trr - 117 ns IF = 50A, dl/dt = 125A/µs
Body Diode Reverse Recovery Charge Qrr - 538 nC

2509121533_MagnaChip-Semicon-MDP14N050TH_C51891807.pdf

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