MOSFET MCC MCG30P03-TP featuring trench power technology and moisture sensitivity level 1 protection
Key Attributes
Model Number:
MCG30P03-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
19A
RDS(on):
13mΩ@20V,20A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
274pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.45nF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
-
Mfr. Part #:
MCG30P03-TP
Package:
DFN3333-8
Product Description
Product Overview
This MOSFET features Trench Power technology for high density cell design, resulting in low RDS(ON). It offers moisture sensitivity level 1 and is a halogen-free, "Green" device. The epoxy meets UL 94 V-0 flammability rating and it has a lead-free finish, complying with RoHS standards. The P suffix designates RoHS compliance. It is suitable for various applications requiring efficient power switching.
Product Attributes
- Brand: 6MGC
- Technology: Trench Power MOSFET
- Environmental: Halogen Free, "Green" Device, Lead Free Finish, RoHS Compliant
- Flammability Rating: UL 94 V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BRDS S | VGS = 0V, ID = -250A | -30 | V | |||
| Gate-Source Leakage Current | IGSS | VDS = -30V, VGS = 20V | 1 | A | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = -30V, VGS = 0V | -1 | A | |||
| Gate Threshold Voltage | VGS(th) | VDS = -5V, ID = -250A | -1.5 | -2.0 | -3.0 | V | |
| Drain-Source On-Resistance | RDS(ON) | VGS = -10V, ID = -15A | 5.9 | m | |||
| VGS = -4.5V, ID = -10A | 12.0 | m | |||||
| VGS = -4.5V, ID = -15A | 15.0 | m | |||||
| VGS = -4.5V, ID = -20A | 20.0 | m | |||||
| Continuous Body Diode Current | IS | -20 | A | ||||
| Diode Forward Voltage | VSD | VGS = 0V, IS = -20A | -1.2 | V | |||
| Input Capacitance | Ciss | VDS = -15V, VGS = 0V, f = 1MHz | 450 | pF | |||
| Output Capacitance | Coss | VDS = -15V, VGS = 0V, f = 1MHz | 100 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS = -15V, VGS = 0V, f = 1MHz | 15 | pF | |||
| Total Gate Charge | Qg | VDS = -15V, ID = -20A, VGS = -10V | 43 | nC | |||
| Gate-Source Charge | Qgs | VDS = -15V, ID = -20A, VGS = -10V | 24.8 | nC | |||
| Gate-Drain Charge | Qgd | VDS = -15V, ID = -20A, VGS = -10V | 20.2 | nC | |||
| Turn-On Delay Time | td(on) | VGS = -10V, ID = -20A, RG = 5.9 | 27 | ns | |||
| Turn-On Rise Time | tr | VGS = -10V, ID = -20A, RG = 5.9 | 6.9 | ns | |||
| Turn-Off Delay Time | td(off) | VGS = -10V, ID = -20A, RG = 5.9 | 77 | ns | |||
| Turn-Off Fall Time | tf | VGS = -10V, ID = -20A, RG = 5.9 | 35 | ns | |||
| Reverse Recovery Time | trr | IF = -20A, dIF/dt = -100A/s | 300 | ns | |||
| Reverse Recovery Charge | Qrr | IF = -20A, dIF/dt = -100A/s | 2 | C | |||
| Operating Junction Temperature Range | -55 | +150 | C | ||||
| Storage Temperature Range | -55 | +150 | C | ||||
| Thermal Resistance Junction to Ambient | RJA | Note 2 | 54 | C/W | |||
| Thermal Resistance Junction to Case | RJC | 3.9 | C/W | ||||
Note 1: "Green" products are defined as those which contain less than 1000ppm bromine, 1000ppm chlorine, 600ppm total halogens, and 900ppm antimony compounds.
Note 2: The value of RJA is measured with the device mounted on 1 in FR-4 board with 2 oz. Copper, in a still air environment with TA = 25C.
Note 3: PD is based on maximum junction temperature, using junction-to-case thermal resistance.
2410010001_MCC-MCG30P03-TP_C6666543.pdf
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