switching power MOSFET MagnaChip Semicon MMP60R360PTH with rugged dv dt and avalanche energy ratings
Key Attributes
Model Number:
MMP60R360PTH
Product Custom Attributes
Mfr. Part #:
MMP60R360PTH
Package:
TO-220
Product Description
Product Overview
The MMP60R360P is a power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to significantly higher efficiency through optimized charge coupling technology. These user-friendly devices provide designers with the advantage of low EMI and low switching loss.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: Halogen Free, RoHS Status: Halogen Free
- Package: TO-220
- Packing: Tube
Technical Specifications
| Parameter | Symbol | Rating | Unit | Note |
| Drain Source voltage | VDSS | 600 | V | |
| Gate Source voltage | VGSS | ±30 | V | |
| Continuous drain current | ID | 11 | A | TC=25 |
| Continuous drain current | ID | 6.95 | A | TC=100 |
| Pulsed drain current | IDM | 33 | A | (1) |
| Power dissipation | PD | 83 | W | |
| Single - pulse avalanche energy | EAS | 220 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | |
| Storage temperature | Tstg | -55 ~150 | ||
| Maximum operating junction temperature | Tj | 150 | ||
| Thermal resistance, junction-case max | Rthjc | 1.5 | /W | |
| Thermal resistance, junction-ambient max | Rthja | 62.5 | /W | |
| Drain Source Breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID=0.25mA |
| Gate Threshold Voltage | VGS(th) | 2-4 | V | VDS = VGS, ID=0.25mA |
| Zero Gate Voltage Drain Current | IDSS | - | 1 μA | VDS = 600V, VGS = 0V |
| Gate Leakage Current | IGSS | - | 100 nA | VGS = ±30V, VDS =0V |
| Drain-Source On State Resistance | RDS(ON) | 0.32-0.36 | Ω | VGS = 10V, ID = 3.8A |
| Input Capacitance | Ciss | 890 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 670 | pF | |
| Reverse Transfer Capacitance | Crss | 40 | pF | |
| Effective Output Capacitance Energy Related | Co(er) | 26 | VDS = 0V to 480V, VGS = 0V,f = 1.0MHz | |
| Turn On Delay Time | td(on) | 18 | ns | VGS = 10V, RG = 25Ω, VDS = 300V, ID = 11A |
| Rise Time | tr | 40 | ns | |
| Turn Off Delay Time | td(off) | 80 | ns | |
| Fall Time | tf | 30 | ns | |
| Total Gate Charge | Qg | 28 | nC | VGS = 10V, VDS = 480V, ID = 11A |
| Gate Source Charge | Qgs | 7 | nC | |
| Gate Drain Charge | Qg | 10 | nC | |
| Gate Resistance | RG | 3.5 | Ω | VGS = 0V, f = 1.0MHz |
| Continuous Diode Forward Current | ISD | 11 | A | |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 11 A, VGS = 0 V |
| Reverse Recovery Time | trr | 375 | ns | ISD = 11 A di/dt = 100 A/μs VDD = 100 V |
| Reverse Recovery Charge | Qrr | 4.1 | μC | |
| Reverse Recovery Current | Irrm | 21.8 | A |
2509121533_MagnaChip-Semicon-MMP60R360PTH_C27247819.pdf
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