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quality Single N Channel Trench MOSFET Semiconductor 100V MagnaChip Semicon MDF1922TH for Power Dissipation factory
quality Single N Channel Trench MOSFET Semiconductor 100V MagnaChip Semicon MDF1922TH for Power Dissipation factory

Single N Channel Trench MOSFET Semiconductor 100V MagnaChip Semicon MDF1922TH for Power Dissipation

Key Attributes
Model Number: MDF1922TH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
7.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
16pF
Output Capacitance(Coss):
720pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
54.5nC@10V
Mfr. Part #:
MDF1922TH
Package:
TO-220F
Product Description

MDF1922 Single N-Channel Trench MOSFET 100V

The MDF1922 utilizes Magnachip's advanced MOSFET Technology, offering superior on-state resistance and fast switching performance. This MOSFET is ideal for synchronous rectification in server/adapter applications and general-purpose use.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Certifications: RoHS Status: Halogen Free

Technical Specifications

Characteristics Symbol Rating Unit Test Condition Min Typ Max
Absolute Maximum Ratings
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 40 A TC=25°C
26 A TC=100°C
Pulsed Drain Current IDM 160 A
Power Dissipation PD 28 W TC=25°C
12 W TC=100°C
Single Pulse Avalanche Energy EAS(2) 400 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 °C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RθJA(1) 62.5 °C/W
Thermal Resistance, Junction-to-Case RθJC 4.5 °C/W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 100 V ID = 250µA, VGS = 0V
Gate Threshold Voltage VGS(th) V VDS = VGS, ID = 250µA 2.0 4.0
Drain Cut-Off Current IDSS µA VDS = 80V, VGS = 0V - - 1.0
Gate Leakage Current IGSS µA VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON) mΩ VGS = 10V, ID = 50A - 7.3 8.7
Forward Transconductance gfs S VDS = 10V, ID = 50A - 60 -
Dynamic Characteristics
Total Gate Charge Qg nC VDS = 50V, ID = 50A, VGS = 10V - 54.5 -
Gate-Source Charge Qgs nC - 16.4 -
Gate-Drain Charge Qgd nC - 10.3 -
Input Capacitance Ciss pF VDS = 40V, VGS = 0V, f = 1.0MHz - 3500 -
Reverse Transfer Capacitance Crss pF - 16 -
Output Capacitance Coss pF - 720 -
Turn-On Delay Time td(on) ns VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω - 13.8 -
Rise Time tr ns - 13.0 -
Turn-Off Delay Time td(off) ns - 39.0 -
Fall Time tf ns - 14.0 -
Gate Resistance Rg Ω f=1 MHz - 2.5 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD V IS = 50A, VGS = 0V - 0.9 1.2
Body Diode Reverse Recovery Time trr ns IF = 50A, dl/dt = 150A/µs - 62.0 -
Body Diode Reverse Recovery Charge Qrr nC - 197.0 -

2509121506_MagnaChip-Semicon-MDF1922TH_C24802897.pdf

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