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quality Power MOSFET LRC LBSS138LT1G N Channel SOT23 Package Suitable for Computer and Printer Devices factory
quality Power MOSFET LRC LBSS138LT1G N Channel SOT23 Package Suitable for Computer and Printer Devices factory

Power MOSFET LRC LBSS138LT1G N Channel SOT23 Package Suitable for Computer and Printer Devices

Key Attributes
Model Number: LBSS138LT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@5.0V,200mA
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
LBSS138LT1G
Package:
SOT-23
Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. LBSS138LT1G is an N-Channel Power MOSFET designed for low voltage applications. It features a low threshold voltage (VGS(th): 0.5V...1.5V) and a miniature SOT-23 surface mount package, making it ideal for space-constrained designs. Typical applications include DC-DC converters and power management in portable and battery-powered devices such as computers, printers, PCMCIA cards, cellular, and cordless telephones. The device is available in Pb-Free packages and the S- prefix denotes AEC-Q101 Qualified and PPAP Capable for automotive and other demanding applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SOT23 (TO236AB)
  • Material Compliance: Halogen Free, RoHS compliant
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
  • Lead Finish: Pb-Free (G-Suffix denotes Pb-Free Lead Finish)

Technical Specifications

Model Description Package Voltage (V) Current (mAmps) R DS(on) (Ohms) Ordering Information
LBSS138LT1G N-Channel Power MOSFET SOT23 50 200 3.5 (Typ @ VGS=5.0V, ID=200mA) LBSS138LT1G, SOT23, 3000 Tape & Reel
S-LBSS138LT1G N-Channel Power MOSFET (Automotive) SOT23 50 200 3.5 (Typ @ VGS=5.0V, ID=200mA) S-LBSS138LT1G, SOT23, 3000 Tape & Reel
LBSS138LT3G N-Channel Power MOSFET SOT23 50 200 3.5 (Typ @ VGS=5.0V, ID=200mA) LBSS138LT3G, SOT23, 10000 Tape & Reel
S-LBSS138LT3G N-Channel Power MOSFET (Automotive) SOT23 50 200 3.5 (Typ @ VGS=5.0V, ID=200mA) S-LBSS138LT3G, SOT23, 10000 Tape & Reel
Parameter Symbol Min Typ Max Unit Condition
DraintoSource Breakdown Voltage V(BR)DSS 50 Vdc VGS = 0 Vdc, ID = 250 Adc
Zero Gate Voltage Drain Current IDSS 0.1 Adc VDS = 25 Vdc, VGS = 0 Vdc
Zero Gate Voltage Drain Current IDSS 0.5 Adc VDS = 50 Vdc, VGS = 0 Vdc
GateSource Leakage Current IGSS 0.1 Adc VGS = 20 Vdc, VDS = 0 Vdc
GateSource Threshold Voltage VGS(th) 0.5 1.5 Vdc VDS = VGS, ID = 1.0 mAdc
Static DraintoSource OnResistance rDS(on) 5.6 10 Ohms VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C
Static DraintoSource OnResistance rDS(on) 3.5 Ohms VGS = 5.0 Vdc, ID = 200 mAdc
Forward Transconductance gfs 100 mmhos VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz
Input Capacitance Ciss 40 50 pF VDS = 25 Vdc, VGS = 0, f = 1 MHz
Output Capacitance Coss 12 25 pF VDS = 25 Vdc, VGS = 0, f = 1 MHz
Transfer Capacitance Crss 3.5 5.0 pF VDG = 25 Vdc, VGS = 0, f = 1 MHz
TurnOn Delay Time td(on) 20 ns VDD = 30 Vdc, ID = 0.2 Adc
TurnOff Delay Time td(off) 20 ns VDD = 30 Vdc, ID = 0.2 Adc
Dimension Min (inch) Max (inch) Min (mm) Max (mm)
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
Pin Assignment Function
1 Base
2 Emitter
3 Collector
Reel Diameter Reel Width Tape Width Pieces per Reel
178.0mm (7.0'') 8.4mm (+1.5mm, -0.0) 8 mm 3000 PCS/Reel
178.0mm (7.0'') 8.4mm (+1.5mm, -0.0) 8 mm 10000 PCS/Reel
Inner Box Quantity Carton Quantity Inner Box Dimensions (mm) Carton Dimensions (mm)
30KPCS/Inner Box 960KPCS/Carton 195*195*150 460*400*420

1811131821_LRC-LBSS138LT1G_C8490.pdf

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