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quality Small signal N Channel MOSFET LRC L2N7002KLT1G with ESD protection and low on resistance in SOT23 package factory
quality Small signal N Channel MOSFET LRC L2N7002KLT1G with ESD protection and low on resistance in SOT23 package factory

Small signal N Channel MOSFET LRC L2N7002KLT1G with ESD protection and low on resistance in SOT23 package

Key Attributes
Model Number: L2N7002KLT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
2.2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
34pF@25V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
710pC@10V
Mfr. Part #:
L2N7002KLT1G
Package:
SOT-23
Product Description

Product Overview

The L2N7002KLT1G is a small signal N-Channel MOSFET designed for various electronic applications. It features ESD protection, low on-resistance (RDS(on)), and is housed in a surface-mount SOT-23 package. This device is Pb-Free and compliant with RoHS and Halogen Free requirements. It is qualified for AEC-Q101 and PPAP capable, making it suitable for automotive and other demanding applications. Key applications include low-side load switching, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Marking: L2N7002KLT1G, S-L2N7002KLT1G
  • Material Compliance: PbFree, RoHS, Halogen Free
  • Qualification: AEC-Q101 Qualified, PPAP Capable
  • Package Type: SOT-23
  • Origin: China (implied by manufacturer name and location of datasheet)

Technical Specifications

Specification Model Value Unit Test Condition
Drain-to-Source Breakdown Voltage (V(BR)DSS) L2N7002KLT1G, S-L2N7002KLT1G 60 Vdc VGS = 0 V, ID = 250 A
Drain-to-Source Breakdown Voltage Temperature Coefficient L2N7002KLT1G, S-L2N7002KLT1G 71 mV/C VGS = 0 V, VDS = 50 V
Gate Threshold Voltage (VGS(TH)) L2N7002KLT1G, S-L2N7002KLT1G 1.0 - 2.5 V VGS = VDS, ID = 250 A
Gate Threshold Voltage Temperature Coefficient L2N7002KLT1G, S-L2N7002KLT1G -4 mV/C
Zero Gate Voltage Drain Current (IDSS) L2N7002KLT1G, S-L2N7002KLT1G 100 nA TJ = 25C, VGS = 0 V, VDS = 50 V
Zero Gate Voltage Drain Current (IDSS) L2N7002KLT1G, S-L2N7002KLT1G 500 A TJ = 125C, VGS = 0 V, VDS = 50 V
Gate-to-Source Leakage Current (IGSS) L2N7002KLT1G, S-L2N7002KLT1G 10 A VDS = 0 V, VGS = 20 V
Drain-to-Source On Resistance (RDS(on)) L2N7002KLT1G, S-L2N7002KLT1G 2.3 VGS = 10 V, ID = 500 mA
Drain-to-Source On Resistance (RDS(on)) L2N7002KLT1G, S-L2N7002KLT1G 2.7 VGS = 5.0 V, ID = 50 mA
Forward Transconductance (Gfs) L2N7002KLT1G, S-L2N7002KLT1G 80 mS VDS = 5 V, ID = 200 mA
Input Capacitance (CISS) L2N7002KLT1G, S-L2N7002KLT1G 34 pF VGS = 0 V, f = 1 MHz, VDS = 25 V
Output Capacitance (COSS) L2N7002KLT1G, S-L2N7002KLT1G 3 pF VGS = 0 V, f = 1 MHz, VDS = 25 V
Reverse Transfer Capacitance (CRSS) L2N7002KLT1G, S-L2N7002KLT1G 2.2 pF VGS = 0 V, f = 1 MHz, VDS = 25 V
Total Gate Charge (QG(TOT)) L2N7002KLT1G, S-L2N7002KLT1G 0.71 nC VGS = 4.5 V, VDS = 10 V; ID = 500 mA
Gate Charge (Threshold) (QG(TH)) L2N7002KLT1G, S-L2N7002KLT1G 0.1 nC VGS = 4.5 V, VDS = 10 V; ID = 500 mA
Gate-to-Source Charge (QGS) L2N7002KLT1G, S-L2N7002KLT1G 0.32 nC VGS = 4.5 V, VDS = 10 V; ID = 500 mA
Gate-to-Drain Charge (QGD) L2N7002KLT1G, S-L2N7002KLT1G 0.16 nC VGS = 4.5 V, VDS = 10 V; ID = 500 mA
Turn-On Delay Time (td(ON)) L2N7002KLT1G, S-L2N7002KLT1G 3.8 ns VDS = 10 V, VGS = 10 V, ID = 500 mA
Rise Time (tr) L2N7002KLT1G, S-L2N7002KLT1G 3.4 ns VDS = 10 V, VGS = 10 V, ID = 500 mA
Turn-Off Delay Time (td(OFF)) L2N7002KLT1G, S-L2N7002KLT1G 19 ns VDS = 10 V, VGS = 10 V, ID = 500 mA
Fall Time (tf) L2N7002KLT1G, S-L2N7002KLT1G 12 ns VDS = 10 V, VGS = 10 V, ID = 500 mA
Forward Diode Voltage (VSD) L2N7002KLT1G, S-L2N7002KLT1G 1.4 V VGS = 0 V, IS = 115 mA
Forward Diode Voltage (VSD) L2N7002KLT1G, S-L2N7002KLT1G 0.7 V VGS = 0 V, IS = 115 mA
Drain Current (ID) - Steady State L2N7002KLT1G, S-L2N7002KLT1G 320 mAdc TA = 25C
Drain Current (ID) - Steady State L2N7002KLT1G, S-L2N7002KLT1G 230 mAdc TA = 85C
Drain Current (ID) - t < 5 s L2N7002KLT1G, S-L2N7002KLT1G 380 mAdc TA = 25C
Drain Current (ID) - t < 5 s L2N7002KLT1G, S-L2N7002KLT1G 270 mAdc TA = 85C
Pulsed Drain Current (IDM) L2N7002KLT1G, S-L2N7002KLT1G 1.5 A tp = 10 s
Power Dissipation (PD) - Steady State L2N7002KLT1G, S-L2N7002KLT1G 300 mW Note 1
Power Dissipation (PD) - Steady State L2N7002KLT1G, S-L2N7002KLT1G 420 mW Note 1
Operating Junction and Storage Temperature Range (TJ, TSTG) L2N7002KLT1G, S-L2N7002KLT1G -55 to +150 C
Source Current (Body Diode) (IS) L2N7002KLT1G, S-L2N7002KLT1G 300 mA
Lead Temperature for Soldering Purposes (TL) L2N7002KLT1G, S-L2N7002KLT1G 260 C 1/8 " from case for 10 s
Gate-Source ESD Rating (HBM) L2N7002KLT1G, S-L2N7002KLT1G 2000 V Method 3015
Junction-to-Ambient Thermal Resistance (RJA) L2N7002KLT1G, S-L2N7002KLT1G 417 C/W
Junction-to-Ambient Thermal Resistance (RJA) L2N7002KLT1G, S-L2N7002KLT1G 300 C/W
Package Dimensions (L) SOT-23 0.89 - 1.02 mm
Package Dimensions (A) SOT-23 2.80 - 3.04 mm
Package Dimensions (B) SOT-23 1.20 - 1.40 mm
Package Dimensions (C) SOT-23 0.89 - 1.11 mm
Package Dimensions (D) SOT-23 0.37 - 0.50 mm
Package Dimensions (G) SOT-23 1.78 - 2.04 mm
Package Dimensions (H) SOT-23 0.013 - 0.100 mm
Package Dimensions (J) SOT-23 0.085 - 0.177 mm
Package Dimensions (K) SOT-23 0.35 - 0.69 mm
Package Dimensions (S) SOT-23 2.10 - 2.64 mm
Package Dimensions (V) SOT-23 0.45 - 0.60 mm
Shipping L2N7002KLT1G, S-L2N7002KLT1G 3000 /Tape&Reel

2410010231_LRC-L2N7002KLT1G_C78564.pdf

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