Low RDSon N Channel MOSFET MCC SI3404HE3 TPA01 with RoHS Compliance and UL 94 V 0 Flammability Rating
Product Overview
The SI3404HE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a high-density cell design for extremely low RDS(on), making it ideal for efficient power management. This device is AEC-Q101 Qualified, Halogen Free, and RoHS Compliant, ensuring suitability for automotive and environmentally conscious industrial applications. Its robust construction meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1 standards.
Product Attributes
- Brand: MCC Semi
- Model: SI3404HE3
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified, Halogen Free ("Green" Device), RoHS Compliant
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 5.6 | A | |||
| Pulsed Drain Current (Note 3) | IDM | 30 | A | |||
| Total Power Dissipation | PD | 1.2 | W | |||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Junction to Ambient Thermal Resistance (Note 2) | 104 | C/W | ||||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 3 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=5.8A | 28 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=4.8A | 42 | m | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | 1 | V | ||
| Forward Tranconductance (Note 4) | gFS | VDS=5V, ID=5.8A | 5 | S | ||
| Dynamic Characteristics (Note 5) | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 820 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 118 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 85 | pF | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 1.5 | |||
| Switching Characteristics (Note 5) | ||||||
| Turn-On Delay Time | td(on) | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 6.5 | ns | ||
| Turn-On Rise Time | tr | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 3.1 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 15.1 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 2.7 | ns | ||
Dimensions (SOT-23):
| DIM | INCHES | MM |
|---|---|---|
| A | 0.110 - 0.120 | 2.80 - 3.04 |
| B | 0.083 - 0.104 | 2.10 - 2.64 |
| C | 0.047 - 0.055 | 1.20 - 1.40 |
| D | 0.034 - 0.041 | 0.85 - 1.05 |
| E | 0.067 - 0.083 | 1.70 - 2.10 |
| F | 0.018 - 0.024 | 0.45 - 0.60 |
| G | 0.0004 - 0.006 | 0.01 - 0.15 |
| H | 0.035 - 0.043 | 0.90 - 1.10 |
| J | 0.003 - 0.007 | 0.08 - 0.18 |
| K | 0.012 - 0.020 | 0.30 - 0.51 |
| L | 0.020 | 0.50 |
| (Overall Package) | 0.079 - 0.110 | 2.00 - 2.80 |
| (Overall Width) | 0.031 - 0.037 | 0.80 - 0.95 |
| (Overall Height) | 0.035 - 0.037 | 0.90 - 0.95 |
Suggested Solder Pad Layout:
| DIM | INCHES | MM |
|---|---|---|
| (Pad Width) | 0.031 | 0.800 |
| (Pad Length) | 0.035 | 0.900 |
| (Pad Spacing) | 0.037 | 0.950 |
Ordering Information:
| Device | Packing | Part Number |
|---|---|---|
| SI3404HE3 | Tape&Reel: 3Kpcs/Reel | SI3404HE3-TP |
2410010132_MCC-SI3404HE3-TPA01_C5173046.pdf
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