Low RDSon N Channel MOSFET MCC SI3404HE3 TPA01 with RoHS Compliance and UL 94 V 0 Flammability Rating

Key Attributes
Model Number: SI3404HE3-TPA01
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V;42mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
118pF
Input Capacitance(Ciss):
820pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
-
Mfr. Part #:
SI3404HE3-TPA01
Package:
SOT-23
Product Description

Product Overview

The SI3404HE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a high-density cell design for extremely low RDS(on), making it ideal for efficient power management. This device is AEC-Q101 Qualified, Halogen Free, and RoHS Compliant, ensuring suitability for automotive and environmentally conscious industrial applications. Its robust construction meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1 standards.

Product Attributes

  • Brand: MCC Semi
  • Model: SI3404HE3
  • Package Type: SOT-23
  • Certifications: AEC-Q101 Qualified, Halogen Free ("Green" Device), RoHS Compliant
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 5.6 A
Pulsed Drain Current (Note 3) IDM 30 A
Total Power Dissipation PD 1.2 W
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Junction to Ambient Thermal Resistance (Note 2) 104 C/W
Electrical Characteristics @ 25C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 30 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=5.8A 28 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=4.8A 42 m
Diode Forward Voltage VSD VGS=0V, IS=1A 1 V
Forward Tranconductance (Note 4) gFS VDS=5V, ID=5.8A 5 S
Dynamic Characteristics (Note 5)
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 820 pF
Output Capacitance Coss VDS=15V,VGS=0V,f=1MHz 118 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V,f=1MHz 85 pF
Gate Resistance Rg VDS=0V,VGS=0V,f=1MHz 1.5
Switching Characteristics (Note 5)
Turn-On Delay Time td(on) VGS=10V,VDS=15V, RL=2.6,RGEN=3 6.5 ns
Turn-On Rise Time tr VGS=10V,VDS=15V, RL=2.6,RGEN=3 3.1 ns
Turn-Off Delay Time td(off) VGS=10V,VDS=15V, RL=2.6,RGEN=3 15.1 ns
Turn-Off Fall Time tf VGS=10V,VDS=15V, RL=2.6,RGEN=3 2.7 ns

Dimensions (SOT-23):

DIM INCHES MM
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50
(Overall Package) 0.079 - 0.110 2.00 - 2.80
(Overall Width) 0.031 - 0.037 0.80 - 0.95
(Overall Height) 0.035 - 0.037 0.90 - 0.95

Suggested Solder Pad Layout:

DIM INCHES MM
(Pad Width) 0.031 0.800
(Pad Length) 0.035 0.900
(Pad Spacing) 0.037 0.950

Ordering Information:

Device Packing Part Number
SI3404HE3 Tape&Reel: 3Kpcs/Reel SI3404HE3-TP

2410010132_MCC-SI3404HE3-TPA01_C5173046.pdf
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