Low Thermal Impedance 60V N Channel MOSFET LRC LN2604DT2AG Suitable for Motor Drive Applications
Key Attributes
Model Number:
LN2604DT2AG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
RDS(on):
40mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
1.28nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
LN2604DT2AG
Package:
DFN2020-6S
Product Description
Product Overview
The LN2604DT2AG is a 60V N-Channel Enhancement MOSFET featuring low RDS(ON) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as DC/DC conversion, power routing, and motor drives. This device is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: Halogen Free, RoHS
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C unless otherwise stated) | ||||||
| DraintoSource Voltage | VDSS | 60 | V | |||
| GatetoSource Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 4 (TA=25°C), 2.8 (TA=70°C) | A | Note 1 | ||
| Pulsed Drain Current | IDM | 35 | A | Note 2 | ||
| Power Dissipation | PD | 1.5 (TA=25°C), 1 (TA=70°C) | W | Note 1 | ||
| Operating Junction and Storage Temperature Range | TJ , TSTG | -55 | +150 | °C | ||
| Avalanche Current | IAS | 10 | A | |||
| Avalanche energy | EAS | 5 | mJ | L=0.1mH | ||
| Thermal Characteristics | ||||||
| JunctiontoAmbient | R JA | 60 | °C/W | Note 3 | ||
| JunctiontoCase | R JC | 20 | °C/W | |||
| Electrical Characteristics | ||||||
| Gate-Source Threshold Voltage | VGS(th) | 3.2 | V | (VDS = VGS , ID = 250 µA) | ||
| Gate-Body Leakage | IGSS | ±10 | µµA | (VDS = 0 V, VGS = ±20 V) | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | (VDS = 48 V, VGS = 0 V) | ||
| Drain-Source On-Resistance | RDS(on) | 35 | mΩ | (VGS = 10 V, ID = 7 A) | ||
| Drain-Source On-Resistance | RDS(on) | 40 | mΩ | (VGS = 4.5 V, ID = 4 A) | ||
| Diode Forward Voltage | VSD | 1.5 | V | (IS = 1.9 A, VGS = 0 V) | ||
| Total Gate Charge | Qg | 23 | nC | (VDS = 15 V, VGS = 4.5 V, ID = 6 A) | ||
| Gate-Source Charge | Qgs | 6 | nC | |||
| Gate-Drain Charge | Qgd | 3 | nC | |||
| Turn-On Delay Time | td(on) | 6 | ns | (VDS = 15 V, RL=1.4 Ω,ID =6 A,VGEN = 10 V, RGEN = 6 Ω) | ||
| Rise Time | tr | 33 | ns | |||
| Turn-Off Delay Time | td(off) | 1280 | ns | |||
| Fall Time | tf | 11 | ns | |||
| Input Capacitance | Ciss | 65 | pF | (VDS = 15 V, VGS = 0 V, f = 1 Mhz) | ||
| Output Capacitance | Coss | 53 | pF | (VDS = 15 V, VGS = 0 V, f = 1 Mhz) | ||
| Reverse Transfer Capacitance | Crss | 0.78 | pF | (VDS = 15 V, VGS = 0 V, f = 1 Mhz) | ||
| Gate Resistance | Rg | 0.74 | Ω | (VDS=0V ,VGS=0V, f=1.0MHz) | ||
| DrainSource Breakdown Voltage | V(BR)DSS | 60 | V | (VGS = 0, ID = 250µA) | ||
| Ordering Information | ||||||
| Model | ||||||
| LN2604DT2AG | 4000/Tape&Reel | |||||
| Outline and Dimensions | ||||||
| Package Type | MIN | NOR | MAX | Unit | ||
| DFN2020-6S | A | 0.60 | 0.65 | 0.70 | mm | |
| DFN2020-6S | A1 | 0.01 | 0.03 | 0.05 | mm | |
| DFN2020-6S | b | 0.25 | 0.30 | 0.35 | mm | |
| DFN2020-6S | D | 1.95 | 2.00 | 2.05 | mm | |
| DFN2020-6S | E | 1.95 | 2.00 | 2.05 | mm | |
| DFN2020-6S | e | 0.65TYP. | mm | |||
| DFN2020-6S | L | 0.23 | 0.28 | 0.33 | mm | |
| DFN2020-6S | L1 | 0.60 | 0.65 | 0.65 | mm | |
| DFN2020-6S | D1 | 0.90 | 0.95 | 1.00 | mm | |
| DFN2020-6S | E1 | 1.10 | 1.15 | 1.20 | mm | |
| DFN2020-6S | Y | 0.43 | mm | |||
| DFN2020-6S | Y1 | 0.75 | mm | |||
| DFN2020-6S | Y2 | 1.15 | mm | |||
| DFN2020-6S | Y3 | 1.54 | mm | |||
| DFN2020-6S | Y4 | 2.39 | mm | |||
| DFN2020-6S | A3 | 0.152REF | mm | |||
| DFN2020-6S | X | 0.40 | mm | |||
| DFN2020-6S | X1 | 0.95 | mm | |||
| DFN2020-6S | X2 | 1.70 | mm | |||
2410010101_LRC-LN2604DT2AG_C2936697.pdf
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