LRC S LP03N060TZHG P Channel MOSFET Featuring Low RDS on and AEC Q101 Qualification for Automotive
Key Attributes
Model Number:
S-LP03N060TZHG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.8A
RDS(on):
170mΩ@10V;200mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 P-Channel
Output Capacitance(Coss):
24pF
Pd - Power Dissipation:
1.7W
Input Capacitance(Ciss):
366pF
Gate Charge(Qg):
3.6nC@4.5V
Mfr. Part #:
S-LP03N060TZHG
Package:
SOT-223
Product Description
Product Overview
The S-LP03N060TZHG is a P-Channel 60-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This MOSFET is AEC-Q101 qualified and PPAP capable, with the 'S-' prefix indicating suitability for automotive and other applications requiring unique site and control change requirements. The material of the product complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Model: S-LP03N060TZHG
- Technology: Trench technology
- Channel Type: P-Channel
- Qualification: AEC-Q101 qualified
- Compliance: RoHS requirements, Halogen Free
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes | |
|---|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | |||||||
| Operating Junction and Storage Temperature Range | TJ , Tstg | -55 | +150 | ||||
| Avalanche Energy | EAS | 3.2 | mJ | (L = 0.1mH) | |||
| Power Dissipation | PD | 1.7 | W | (Note1, TA = 25) | |||
| Avalanche Current | IAS | 8 20 | A | (L = 0.1mH) | |||
| Continuous Drain Current | ID | -2.8 | A | (Note1, TA = 25) | |||
| Pulsed Drain Current | IDM | A | (Note2) | ||||
| Drain-Source Voltage | VDS | -60 | V | ||||
| Gate-Source Voltage | VGS | -12 | |||||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||||
| DrainSource Breakdown Voltage | VBRDSS | -60 | V | (VGS = 0, ID = -250A) | |||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | (VDS =VGS , ID =-250A) | ||
| Gate Leakage Current | IGSS | 100 | nA | (VDS =0V, VGS =20V) | |||
| Zero Gate Voltage Drain Current | IDSS | -10 | A | (VDS = -60 V, VGS = 0 V) | |||
| Drain-Source On-Resistance | RDS(ON) | 170 | 200 | m | (VGS = -10 V, ID = -1.8 A) | ||
| 215 | 260 | m | (VGS = -4.5 V, ID = -1.4 A) | ||||
| Diode Forward Voltage | VSD | -1.2 | V | (IS = -1.2 A, VGS = 0 V) | |||
| Dynamic | |||||||
| Total Gate Charge | Qg | 3.6 | nC | (VDS = -48 V, VGS = -4.5 V,ID = -1 A) | |||
| Gate-Source Charge | Qgs | 1.2 | |||||
| Gate-Drain Charge | Qgd | 1.7 | |||||
| Switching Time | td(on) | 3.2 | ns | (VDS = -30 V, RL = 30 ,ID = -1 A,VGEN = -10 V, RGEN = 3.1 ) | |||
| tr | 17.2 | ns | |||||
| Switching Time | td(off) | 14.5 | ns | (VDS = -30 V, VGS = 0 V, f = 1 MHz) | |||
| tf | 23.6 | ns | |||||
| Capacitance | Ciss | 366 | pF | (VDS = -30 V, VGS = 0 V, f = 1 MHz) | |||
| Coss | 24 | pF | |||||
| Crss | 17 | pF | |||||
| Gate Resistance | Rg | 5 | (VDS = 0 V, VGS = 0 V, f = 1 MHz) | ||||
| THERMAL CHARACTERISTICS | |||||||
| Thermal Resistance,JunctiontoAmbient | RJA | 70 | /W | (Note 1) | |||
| Thermal Resistance,Junction-to-Case | RJC | 20 | /W | (Note 3) | |||
| Device Marking | |||||||
| Device Marking | S-LP03N060TZHG | ||||||
| Shipping | |||||||
| Shipping | 4000/Tape&Reel | ||||||
Notes:
- 1. "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.
- 2. Pulse width limited by maximum junction temperature.
- 3. Surfacemounted on FR4 board using the minimum recommended pad size.
- 4. Pulse test: PW 300us duty cycle 2%.
2506171712_LRC-S-LP03N060TZHG_C5200150.pdf
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