Industrial grade MCC MCAC80N06Y TP MOSFET featuring Split Gate Trench Technology and RoHS compliance
Product Overview
The MCAC80N06Y is a high-performance N-channel MOSFET featuring Split Gate Trench MOSFET Technology. It offers very low on-resistance (RDS(ON)) and is designed for applications requiring efficient power switching. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, making it a "Green" device. It is also Lead Free and RoHS Compliant. The operating junction temperature range is -55C to +150C, with a storage temperature range of the same limits. It is suitable for various industrial applications where reliable and efficient power management is crucial.
Product Attributes
- Brand: MCC
- Model: MCAC80N06Y
- Technology: Split Gate Trench MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free, "Green" Device, Lead Free, RoHS Compliant
- Packaging: Tape & Reel (5Kpcs/Reel)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | TC=25C | 60 | V | ||
| Drain-Source Voltage | VDS | TC=100C | 80 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 50 | A | ||
| Continuous Drain Current | ID | TC=100C | 32 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 400 | A | ||
| Single Pulse Avalanche Energy | EAS | (Note 5) | 85 | mJ | ||
| Total Power Dissipation | PD | (Note 4) | 320 | W | ||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient (Steady-State) | RJA | (Note 2) | 45 | C/W | ||
| Thermal Resistance Junction to Case | RJC | 1.47 | C/W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | 65 | V | |
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V,TJ=55C | 5 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.7 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 3.0 | 4.2 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=10A | 3.9 | 5.2 | m | |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | 3783 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | 810 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | 26 | pF | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 0.8 | |||
| Total Gate Charge | Qg | VDS=30V,VGS=4.5V,ID=40A | 30 | nC | ||
| Total Gate Charge | Qg | VDS=30V,VGS=10V,ID=40A | 62 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V,VGS=10V,ID=40A | 9.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS=30V,VGS=10V,ID=40A | 11 | nC | ||
| Reverse Recovery Chrage | Qrr | IF=IS, di/dt=100A/s | 58 | nC | ||
| Reverse Recovery Time | trr | IF=IS, di/dt=100A/s | 52 | ns | ||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=15V, RL=2.5, RGEN=3, ID=6A | 13.4 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=15V, RL=2.5, RGEN=3, ID=6A | 12 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=15V, RL=2.5, RGEN=3, ID=6A | 46 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=2.5, RGEN=3, ID=6A | 12 | ns | ||
| Continuous Body Diode Current | IS | 80 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A | 0.85 | 1.3 | V |
Dimensions (DFN5060):
| DIM | INCHES | MM |
|---|---|---|
| A | 0.031 - 0.047 | 0.80 - 1.20 |
| B | 0.193 - 0.222 | 4.90 - 5.64 |
| C | 0.232 - 0.250 | 5.90 - 6.35 |
| D | 0.148 - 0.167 | 3.75 - 4.25 |
| E | 0.126 - 0.154 | 3.20 - 3.92 |
| F | 0.189 - 0.213 | 4.80 - 5.40 |
| G | 0.222 - 0.239 | 5.65 - 6.06 |
| H | 0.045 - 0.059 | 1.15 - 1.50 |
| K | 0.012 - 0.020 | 0.30 - 0.50 |
| J | 0.046 - 0.054 | 1.17 - 1.37 |
| L | 0.012 - 0.028 | 0.30 - 0.71 |
| M | 0.016 - 0.028 | 0.40 - 0.71 |
| N | 0.010 TYP. | 0.254 TYP. |
Internal Structure and Marking Code: MCC MCAC80N06Y
Note 1: Halogen free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Note 2: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design.
Note 3: Repetitive rating; pulse width limited by max. junction temperature.
Note 4: PD is based on max. junction temperature, using junction-case thermal resistance.
Note 5: TJ=25, VDD=40V, VG=10V, L=2mH.
2411220451_MCC-MCAC80N06Y-TP_C914334.pdf
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