Advanced trench process technology in LRC LP2305ALT1G 20V P Channel Enhancement Mode MOSFET for power control
Key Attributes
Model Number:
LP2305ALT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
210pF@4V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.245nF@4V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
5.76nC@4.5V
Mfr. Part #:
LP2305ALT1G
Package:
SOT-23E
Product Description
Product Overview
The LP2305ALT1G is a 20V P-Channel Enhancement-Mode MOSFET manufactured by Leshan Radio Company, LTD. It features an advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is fully characterized for avalanche voltage and current, offering improved Shoot-Through FOM. The material complies with RoHS requirements and is Halogen Free. It is suitable for applications requiring efficient power switching and low on-state resistance.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model: LP2305ALT1G
- Technology: Advanced trench process
- Design: High Density Cell Design
- Compliance: RoHS, Halogen Free
- Type: P-Channel Enhancement-Mode MOSFET
- Voltage Rating: 20V
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDSS | -20 | V | |||
| GatetoSource Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -4 | A | (Ta = 25C) | ||
| Pulsed Drain Current | IDM | -12 | A | (Note 1) | ||
| Power Dissipation | PD | 1100 | mW | (Note 2) | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 110 | C/W | |||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Static DrainSource Breakdown Voltage | VBRDSS | -20 | V | (VGS = 0, ID = -250A) | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | (VGS = 0, VDS = -6.4 V) | ||
| GateBody Leakage Current | IGSS | 100 | nA | (VGS= 8V, VDS = 0V) | ||
| Gate Threshold Voltage | VGS(th) | -0.45 | -0.88 | V | (VDS = VGS, ID = -250A) | |
| Static DrainSource OnState Resistance | RDS(on) | 47 | 68 | 81 | m | (VGS = -4.5 V, ID = -3.5 A) |
| 67 | 81 | m | (VGS = -2.5 V, ID = -3 A) | |||
| 118 | m | (VGS = -1.8 V, ID = -2 A) | ||||
| On-State Drain Current | ID(on) | -3 | A | (VDS -5 V, VGS -2.5 V) | ||
| -6 | A | (VDS -5 V, VGS -4.5 V) | ||||
| Diode Forward Voltage | VSD | -1.2 | V | (IS = -1.6A, VGS = 0V) | ||
| Input Capacitance | Ciss | 1245 | pF | (VGS = 0 V, f = 1.0MHz,VDS= -4 V) | ||
| Output Capacitance | Coss | 375 | pF | (VGS = 0 V, f = 1.0MHz,VDS= -4 V) | ||
| Reverse Transfer Capacitance | Crss | 210 | pF | (VGS = 0 V, f = 1.0MHz,VDS= -4 V) | ||
| Turn-On Delay Time | td(on) | 13 | 20 | ns | (VDD = -4V, RL= 4 ID = -1A, VGEN = -4.5V RG = 6) | |
| Rise Time | tr | 25 | 40 | ns | ||
| Turn-Off Delay Time | td(off) | 55 | 80 | ns | ||
| Fall Time | tf | 19 | 35 | ns | ||
| Total Gate Charge | Qg | 5.76 | nC | (VDS=-10V,VGS=-4.5V,ID=-3.0A) | ||
| Gate-Source Charge | Qgs | 2.2 | nC | (VDS=-10V,VGS=-4.5V,ID=-3.0A) | ||
| Gate-Drain Charge | Qgd | 0.88 | nC | (VDS=-10V,VGS=-4.5V,ID=-3.0A) |
Device Marking and Ordering Information
| Device Marking | Shipping | Package |
|---|---|---|
| P5A | 10000/Tape&Reel | SOT23(TO-236) |
| P5A | 3000/Tape&Reel | SOT23(TO-236) |
Outline and Dimensions
| Dimension | Millimeters (MIN) | Millimeters (NOM) | Millimeters (MAX) | Inches (MIN) | Inches (NOM) | Inches (MAX) |
|---|---|---|---|---|---|---|
| A | 0.89 | 1 | 1.11 | 0.035 | 0.04 | 0.044 |
| A1 | 0.01 | 0.06 | 0.1 | 0.001 | 0.002 | 0.004 |
| b | 0.37 | 0.44 | 0.5 | 0.015 | 0.018 | 0.044 |
| c | 0.09 | 0.13 | 0.18 | 0.003 | 0.005 | 0.007 |
| D | 2.80 | 2.9 | 3.04 | 0.11 | 0.114 | 0.12 |
| E | 1.20 | 1.3 | 1.4 | 0.047 | 0.051 | 0.055 |
| e | 1.78 | 1.9 | 2.04 | 0.07 | 0.075 | 0.081 |
| HE | 2.10 | 2.4 | 2.64 | 0.083 | 0.094 | 0.104 |
| L | 0.10 | 0.2 | 0.3 | 0.004 | 0.008 | 0.012 |
| L1 | 0.35 | 0.54 | 0.69 | 0.014 | 0.021 | 0.027 |
Electrical Characteristics Curves
Refer to the provided documentation for detailed electrical characteristic curves including:
- ID vs. VDS
- ID vs. VGS
- IS vs. VSD
- RDS(on) vs. ID
- RDS(on) vs. VGS
- RDS(on) vs. Tj
- Capacitance (Ciss, Coss, Crss)
- VGSTH vs. Tj
2212131830_LRC-LP2305ALT1G_C5273708.pdf
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