30 Volt N Channel MOSFET LRC LN3432LT1G Featuring Low RDS on and Halogen Free Material Compliance
Key Attributes
Model Number:
LN3432LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
RDS(on):
42mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
50.3pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
511pF@15V
Gate Charge(Qg):
-
Mfr. Part #:
LN3432LT1G
Package:
SOT-23E
Product Description
Product Overview
The LN3432LT1G is an N-Channel 30-V (D-S) MOSFET designed for various power applications. It features low RDS(on) trench technology, low thermal impedance, and fast switching speeds. This MOSFET is suitable for applications such as Power Routing, DC/DC Conversion, and Motor Drives. The device is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Material Compliance: Halogen Free, RoHS
- Package Type: SOT 23 (TO236AB)
- Channel Type: N-Channel
- Product Line: LN3432LT1G
Technical Specifications
| Parameter | Symbol | Unit | Limits | Notes |
|---|---|---|---|---|
| DraintoSource Voltage | VDSS | V | 30 | |
| GatetoSource Voltage | VGS | V | 20 | |
| Continuous Drain Current | ID | A | 9 (TC =25C), 6 (TC =70C) | Steady State |
| Pulsed Drain Current | IDM | A | 29 | Pulse width limited by maximum junction temperature. |
| Avalanche Current | IAS | A | 9 | |
| Avalanche energy | EAS | mJ | 4 | L=0.1mH |
| Gate-Source Threshold Voltage | VGS(th) | V | 1.0 (Min.), 1.5 (Typ.), 3.0 (Max.) | (VDS = VGS , ID = 250 uA) |
| Gate-Body Leakage | IGSS | nA | 100 | (VDS = 0 V, VGS = 20 V) |
| Zero Gate Voltage Drain Current | IDSS | A | 1 (Max.) | (VDS = 24 V, VGS = 0 V) |
| Drain-Source On-Resistance | RDS(on) | m | 28 (Typ.) | (VGS = 10 V, ID = 6 A) |
| 32 (Typ.) | (VGS = 4.5 V, ID = 5 A) | |||
| Diode Forward Voltage | VSD | V | 1.3 (Typ.) | (IS =0.5A, VGS = 0 V) |
| Total Gate Charge | Qg | nC | 22 (Typ.) | (VDS = 15 V, RL = 1.9 ,ID = 4 A,VGEN = 10 V, RGEN = 6 ) |
| Gate-Source Charge | Qgs | nC | 5.12 (Typ.) | (VDS = 15 V, RL = 1.9 ,ID = 4 A,VGEN = 10 V, RGEN = 6 ) |
| Gate-Drain Charge | Qgd | nC | 1.32 (Typ.) | (VDS = 15 V, RL = 1.9 ,ID = 4 A,VGEN = 10 V, RGEN = 6 ) |
| Input Capacitance | Ciss | pF | 42 (Typ.) | (VDS = 15 V, VGS = 0 V, f = 1 Mhz) |
| Output Capacitance | Coss | pF | 24 (Typ.) | (VDS = 15 V, VGS = 0 V, f = 1 Mhz) |
| Reverse Transfer Capacitance | Crss | pF | 6 (Typ.) | (VDS = 15 V, VGS = 0 V, f = 1 Mhz) |
| Turn-On Delay Time | td(on) | ns | 34 (Typ.) | (VDS = 15 V, VGS = 4.5 V,ID = 4 A) |
| Rise Time | tr | ns | 46 (Typ.) | (VDS = 15 V, VGS = 4.5 V,ID = 4 A) |
| Turn-Off Delay Time | td(off) | ns | 511 (Typ.) | (VDS = 15 V, VGS = 4.5 V,ID = 4 A) |
| Fall Time | tf | ns | 50.3 (Typ.) | (VDS = 15 V, VGS = 4.5 V,ID = 4 A) |
| Maximum Junction-to-Case Thermal Resistance | RJC | /W | 1.6 (TC =25C), 1.4 (TC =70C) | Steady State |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | /W | 45 (TA =25C), 90 (TA =70C) | (Note 1) 1-in 2oz Cu PCB board |
| Operating Junction Temperature | TJ | 55 ~+150 | ||
| Storage Temperature Range | Tstg | 55 ~+150 |
Note 1: 1-in 2oz Cu PCB board. Pulse test: PW 300s duty cycle 2%. Guaranteed by design, not subject to production testing.
2211080930_LRC-LN3432LT1G_C5201701.pdf
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