power MOSFET MASPOWER MS350N10JDC0 designed for battery chargers DC DC converters and power supplies
Key Attributes
Model Number:
MS350N10JDC0
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
350A
RDS(on):
2.3mΩ@10V
Operating Temperature -:
-55℃~+100℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
630pF
Input Capacitance(Ciss):
47nF
Output Capacitance(Coss):
2.7nF
Pd - Power Dissipation:
463W
Gate Charge(Qg):
650nC@10V
Mfr. Part #:
MS350N10JDC0
Package:
TO-247
Product Description
Product Overview
The MS350N10JDC0 H1.01 Maspower is a high-performance power semiconductor designed for demanding applications. It features low RDS(on), fast switching capabilities, and 100% avalanche testing for reliability. Its low package inductance and low intrinsic rectifier contribute to efficient operation. This product is ideal for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, and linear current regulators.
Product Attributes
- Brand: Maspower
- Model: MS350N10JDC0 H1.01
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Drain Current -continuous | ID | T=25 | 350 | A | ||
| T=100 | 175 | A | ||||
| Drain Current - pulse (note 1) | IDM | 1400 | A | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Single Pulsed Avalanche Energy (note 2) | EAS | 2500 | mJ | |||
| Avalanche Current(note 1) | IAR | 100 | A | |||
| Peak Diode Recovery dv/dt(note 3) | dv/dt | 20 | V/ns | |||
| Power Dissipation | PD | TC=25 | 463 | W | ||
| -Derate above 25 | 3.08 | W/ | ||||
| Operating Temperature and Storage Temperature Range | Tj,TSTG | -55 | +100 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 100 | - | - | V |
| Drain cut-off current | IDSS | VDS=100V,Tj=25 | - | - | 1 | A |
| VDS=100V,Tj=125 | - | - | 500 | |||
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=20V | - | - | 100 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=-20V | - | - | -100 | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=50A (note 4) | - | 2.3 | 2.9 | m |
| Forward Transconductance | gfs | VDS =10V , ID=50A (note 4) | - | 9 | - | S |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 47 | - | nF |
| Output capacitance | Coss | - | 2700 | - | pF | |
| Reverse transfer capacitance | Crss | - | 630 | - | pF | |
| Turn-On delay time | td(on) | VDD=35V,ID=175A, RG=5 VGS=10V | - | 90 | - | ns |
| Turn-On rise time | tr | - | 185 | - | ||
| Turn-Off delay time | Td(off) | - | 170 | - | ||
| Turn-Off Fall time | tf | - | 240 | - | ||
| Total Gate Charge | Qg | VDS=50V,ID=175A, VGS=10V(note5) | - | 650 | - | nC |
| Gate-Source charge | Qgs | - | 112 | - | ||
| Gate-Drain charge | Qg d | - | 206 | - | ||
| Drain-Source Voltage | VSD | VGS=0V,IS=10A (note 4) | - | 0.76 | 1.2 | V |
| Continuous Drain-Source Current | IS | - | - | 350 | A | |
| Pulsed Drain-Source Current | ISM | - | - | 1320 | ||
| Reverse recovery time | trr | VGS=0V,IF=50A dIF/dt=100A/us | - | 95 | - | ns |
| Reverse recovery charge | Qrr | - | 1.23 | - | uC | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.27 | /W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | ||||
2508261540_MASPOWER-MS350N10JDC0_C50726507.pdf
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