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quality Small Footprint N Channel MOSFET LRC LNTA4001NT1G with Fast Switching and High ESD Protection Ratings factory
quality Small Footprint N Channel MOSFET LRC LNTA4001NT1G with Fast Switching and High ESD Protection Ratings factory

Small Footprint N Channel MOSFET LRC LNTA4001NT1G with Fast Switching and High ESD Protection Ratings

Key Attributes
Model Number: LNTA4001NT1G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
238mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@2.5V,10mA
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
LNTA4001NT1G
Package:
SC-89
Product Description

Product Overview

This N-Channel Small Signal MOSFET offers a 20V drain-to-source voltage and 238mA continuous drain current, featuring a low gate charge for fast switching and an ESD-protected gate. Its compact 1.6 x 1.6 mm footprint makes it ideal for space-constrained portable applications. Available in Pb-Free packages, it is suitable for power management load switches and level shift applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SC-89
  • Certifications: AEC-Q101 Qualified (S- Prefix for Automotive)
  • ESD Protection: 1500V, 2000V (Specific values vary by test)
  • Material: Pb-Free Package Available

Technical Specifications

Model Description Value Unit
LNTA4001NT1G / S-LNTA4001NT1G Drain-to-Source Voltage (VDSS) 20 V
Gate-to-Source Voltage (VGS) ±10 V
Continuous Drain Current (ID) (Steady State @ 25°C) 238 mA
Power Dissipation (PD) (Steady State @ 25°C) 300 mW
Pulsed Drain Current (IDM) (tP = 10 µs) 714 mA
Operating Junction and Storage Temperature (TJ, TSTG) -55 to 150 °C
Continuous Source Current (Body Diode) (ISD) 238 mA
Lead Temperature for Soldering (1/8” from case for 10 s) (TL) 260 °C
Thermal Resistance Junction-to-Ambient (RJA) (Steady State, Note 1) 416 °C/W
Drain-to-Source Breakdown Voltage (V(BR)DSS) (VGS = 0 V, ID = 100 µA) 20 V
Gate Threshold Voltage (VGS(TH)) (VDS = 3 V, ID = 100 µA) 0.5 - 1.5 V
Drain-to-Source On Resistance (RDS(on)) (VGS = 4.5 V, ID = 10 mA) 1.5 Ω (Typ)
Drain-to-Source On Resistance (RDS(on)) (VGS = 2.5 V, ID = 10 mA) 2.2 Ω (Typ)
Input Capacitance (CISS) (VDS = 5 V, f = 1 MHz, VGS = 0 V) 11.5 - 20 pF
Output Capacitance (COSS) (VDS = 5 V, f = 1 MHz, VGS = 0 V) 10 - 15 pF
Reverse Transfer Capacitance (CRSS) (VDS = 5 V, f = 1 MHz, VGS = 0 V) 3.5 - 6.0 pF
Turn-On Delay Time (td(ON)) (VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 Ω) 13 ns
Rise Time (tr) (VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 Ω) 15 ns
Turn-Off Delay Time (td(OFF)) (VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 Ω) 98 ns
Fall Time (tf) (VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 Ω) 60 ns
Forward Diode Voltage (VSD) (VGS = 0 V, IS = 10 mA) 0.66 - 0.8 V
Footprint 1.6 x 1.6 mm mm
Ordering Information LNTA4001NT1G SC-89 3000 Tape & Reel
Ordering Information LNTA4001NT3G SC-89 10000 Tape & Reel
Ordering Information S-LNTA4001NT1G SC-89 Automotive, AEC-Q101 Qualified, 3000 Tape & Reel
Ordering Information S-LNTA4001NT3G SC-89 Automotive, AEC-Q101 Qualified, 10000 Tape & Reel

Note 1: Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).

Note 2: Pulse Test: pulse width ≤ 300 µs, duty cycle ≤ 2%.

Note 3: Switching characteristics are independent of operating junction temperatures.


2410010303_LRC-LNTA4001NT1G_C136170.pdf

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