MCC MCU12P10 TP featuring high density cell design and lead free finish RoHS compliant for switching
Key Attributes
Model Number:
MCU12P10-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9.2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
170mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
41pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.055nF@25V
Pd - Power Dissipation:
40W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
MCU12P10-TP
Package:
DPAK
Product Description
Product Overview
The MCU12P10 is a P-Channel MOSFET from MCC Semi, designed with Advanced Trench Process Technology and a High Density Cell Design for ultra-low on-resistance. It offers a reliable and rugged performance, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This MOSFET is suitable for various applications requiring efficient power switching. Halogen-free options are available upon request by adding the "-HF" suffix, and the product is Lead Free Finish/RoHS Compliant.
Product Attributes
- Brand: MCC Semi
- Technology: Advanced Trench Process
- Cell Design: High Density Cell Design
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- RoHS Compliance: Lead Free Finish/RoHS Compliant (indicated by "P" suffix)
- Halogen Free: Available upon request (by adding "-HF" suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | -100 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current | ID | TC=25°C | -9.2 | A | |||
| Pulsed Drain Current | IDM | -30 | A | ||||
| Single Pulse Avalanche Energy | EAS | TC=100°C (Note 2) | 110 | mJ | |||
| Total Power Dissipation | PD | 1.7 | W | ||||
| Operating Junction Temperature Range | -55 | +150 | °C | ||||
| Storage Temperature Range | -55 | +150 | °C | ||||
| Thermal Resistance (Junction to Case) | RθJC | (Note 1) | 3.13 | °C/W | |||
| Static Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250µA | -100 | V | |||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =±20V | ±10 | µA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | µA | |||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA (Note 3) | -1 | -1.9 | -3 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-8A (Note 3) | 170 | 200 | mΩ | ||
| Forward Tranconductance | gFS | VDS=-15V, ID=-5A (Note 3) | 12 | S | |||
| Dynamic Characteristics | |||||||
| Input Capacitance | Ciss | VDS=-25V,VGS=0V,f=1MHz | 1055 | pF | |||
| Output Capacitance | Coss | 65 | pF | ||||
| Reverse Transfer Capacitance | Crss | 41 | pF | ||||
| Total Gate Charge | Qg | VDD=-50V,ID=-10A | 25 | nC | |||
| Gate-Source Charge | Qgs | VGS=-10V,RGEN=9.1Ω | 5 | nC | |||
| Gate-Drain Charge | Qgd | 7 | nC | ||||
| Turn-On Delay Time | td(on) | VDS=-50V,VGS=-10V,ID=-10A | 14 | ns | |||
| Turn-On Rise Time | tr | 18 | ns | ||||
| Turn-Off Delay Time | td(off) | 50 | ns | ||||
| Turn-Off Fall Time | tf | 18 | ns | ||||
| Drain-Source Body Diode Characteristics | |||||||
| Continuous Body Diode Current | IS | TC=25°C | -13 | A | |||
| Body Diode Voltage | VSD | IF=-10A, VGS=0V | -1.2 | V | |||
| Reverse Recovery Time | trr | IF=-10A,di/dt=100A/μs | 35 | ns | |||
| Reverse Recovery Charge | Qrr | 46 | nC | ||||
| Package Dimensions (DPAK/TO-252) | |||||||
| DIM | INCHES | MM | MIN | MAX | MIN | MAX | |
| A | 0.087 | 2.20 | 0.094 | 2.40 | |||
| B | 0.000 | 0.00 | 0.005 | 0.13 | |||
| C | 0.026 | 0.66 | 0.034 | 0.86 | |||
| D | 0.018 | 0.46 | 0.023 | 0.58 | |||
| E | 0.256 | 6.50 | 0.264 | 6.70 | |||
| F | 0.201 | 5.10 | 0.215 | 5.46 | |||
| G | 0.236 | 6.00 | 0.244 | 6.20 | |||
| H | 0.086 | 2.18 | 0.094 | 2.39 | |||
| I | 0.386 | 9.80 | 0.409 | 10.40 | |||
| J | 0.055 | 1.40 | 0.067 | 1.70 | |||
| K | 0.211 | 5.35 | |||||
| L | 0.114 | 2.90 | 0.190 | 4.83 | |||
| M | 0.063 | 1.60 | |||||
| O | 0.043 | 1.10 | 0.051 | 1.30 | |||
| Q | 0.000 | 0.00 | 0.012 | 0.30 | |||
| V | 0.114 | 2.90 | 0.190 | 4.83 | |||
| Pinout | 1. Gate | 2,4. Drain | 3. Source | ||||
Notes:
- 1. Surface Mounted on FR4 Board, t ≤ 10 sec.
- 2. EAS Condition: TJ=25°C, VDD=-50V, VG=-10V, L=0.5mH, Rg=25Ω.
- 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
- 4. Guaranteed by Design, Not Subject to Production Testing.
Ordering Information:
| Device | Packing | Part Number |
|---|---|---|
| MCU12P10 | Tape&Reel: 2.5Kpcs/Reel | Part Number-TP |
Note: Adding "-HF" Suffix for Halogen Free, e.g., Part Number-TP-HF
2008121536_MCC-MCU12P10-TP_C721380.pdf
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