High Cell Density DMOS Trench P Channel MOSFET MATSUKI ME20P06 G with Loss and Compact TO 252 Package
Key Attributes
Model Number:
ME20P06-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
17.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
958pF
Output Capacitance(Coss):
-
Pd - Power Dissipation:
39.1W
Gate Charge(Qg):
-
Mfr. Part #:
ME20P06-G
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME20P06 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery-powered circuits where low power loss is critical in a compact surface-mount package. Key features include exceptionally low RDS(ON) and high DC current capability.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME20P06 (Pb-free), ME20P06-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
- Package Type: TO-252-3L
Technical Specifications
| Symbol | Parameter | Limit | Unit | Notes |
| Maximum Ratings | ||||
| VDS | Drain-Source Voltage | -60 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Continuous Drain Current (TC=25) | -17.7 | A | |
| ID | Continuous Drain Current (TC=70) | -14.1 | A | |
| IDM | Pulsed Drain Current | -71 | A | |
| PD | Maximum Power Dissipation (TC=25) | 39.1 | W | |
| PD | Maximum Power Dissipation (TC=70) | 25 | W | |
| TJ | Operating Junction Temperature | -55 to 150 | ||
| RJC | Thermal Resistance-Junction to Case* | 3.2 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Electrical Characteristics (TC =25 Unless Otherwise Specified) | ||||
| V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | -60 | V | |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250A) | -1 to -3 | V | |
| IGSS | Gate Leakage Current (VDS=0V, VGS=20V) | 100 | nA | |
| IDSS | Zero Gate Voltage Drain Current (VDS=-60V, VGS=0V) | -1 | A | |
| RDS(ON) | Drain-Source On-State Resistance (VGS=-10V, ID= -20A) | 65 to 78 | m | a |
| RDS(ON) | Drain-Source On-State Resistance (VGS=-4.5V, ID= -16A) | 80 to 100 | m | a |
| VSD | Diode Forward Voltage (IS=-20A, VGS=0V) | -1 to -1.2 | V | |
| Dynamic Characteristics | ||||
| Qg | Total Gate Charge (10V) (VDS=-30V, VGS=-10V, ID=-20A) | 22 | nC | |
| Qg | Total Gate Charge (4.5V) (VDS=-30V, VGS=-4.5V, ID=-20A) | 10 | nC | |
| Qgs | Gate-Source Charge | 6.3 | nC | |
| Qgd | Gate-Drain Charge | 5 | nC | |
| Ciss | Input Capacitance (VDS=-15V, VGS=0V, F=1MHz) | 958 | pF | |
| Coss | Output Capacitance | 100 | pF | |
| Crss | Reverse Transfer Capacitance | 33 | pF | |
| td(on) | Turn-On Delay Time (VDS=-15V, RL =15 ID=-1A, VGEN=-10V, RG=3) | 36 | ns | |
| tr | Turn-On Rise Time | 16 | ns | |
| td(off) | Turn-Off Delay Time | 53 | ns | |
| tf | Turn-Off Fall Time | 6 | ns | |
Notes:
a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
2410121656_MATSUKI-ME20P06-G_C165227.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
