N Channel MOSFET MCC MCAC40N10YA TP with 100V Drain Source Voltage and 40A Continuous Drain Current

Key Attributes
Model Number: MCAC40N10YA-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
31pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.684nF@50V
Pd - Power Dissipation:
70W
Mfr. Part #:
MCAC40N10YA-TP
Package:
PDFN-8(5x5)
Product Description

Product Overview

The MCAC40N10YA is an N-Channel MOSFET featuring an Advanced Trench Cell Design for high-speed switching. It is designed to meet UL 94 V-0 flammability rating and offers Moisture Sensitivity Level 1. This MOSFET is available as Halogen Free upon request by adding the "-HF" suffix and is Lead Free/RoHS Compliant, indicated by the "P" suffix. It is suitable for applications requiring efficient and reliable power switching.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Product Type: N-Channel MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliance: Lead Free/RoHS Compliant (indicated by "P" suffix)
  • Halogen Free: Available upon request (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 100 V
Continuous Drain Current (Note 1) ID 40 A
Pulsed Drain Current (Note 1) IDM 160 A
Total Power Dissipation (Note 1) PD 70 W
Gate-Source Voltage VGS 20 V
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Case (Note 1) 1.78 C/W
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V 1 A
Gate-Threshold Voltage (Note 2) VGS(th) VDS=VGS, ID=250A 2 4 V
Drain-Source On-Resistance (Note 2) RDS(on) VGS=10V, ID=20A 9.3 12 m
Diode Characteristics
Diode Forward Voltage (Note 2) VSD VGS=0V, ISD=20A 1.3 V
Reverse Recovery Time trr ISD = 20 A, dlSD / dt = 100 A / s 83 ns
Reverse Recovery Charge Qrr ISD = 20 A, dlSD / dt = 100 A / s 62 nC
Dynamic Characteristics (Note 3)
Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHz 1684 pF
Output Capacitance Coss VDS=50V,VGS=0V,f=1MHz 259 pF
Reverse Transfer Capacitance Crss VDS=50V,VGS=0V,f=1MHz 31 pF
Total Gate Charge Qg VDS=50V, VGS=10V, ID=20A 30.6 nC
Gate-Source Charge Qgs VDS=50V, VGS=10V, ID=20A 10 nC
Gate-Drain Charge Qgd VDS=50V, VGS=10V, ID=20A 8 nC
Turn-On Delay Time td(on) VDS=50V,VGS=10V,f=1MHz 10 ns
Turn-On Rise Time tr VDS=50V,VGS=10V,f=1MHz 21.4 ns
Turn-Off Delay Time td(off) VDS=50V,VGS=10V,f=1MHz 21.2 ns
Turn-Off Fall Time tf VDS=50V,VGS=10V,f=1MHz 7.8 ns
Dimensions (DFN5060)
DIM INCHES MM
A 0.031 - 0.047 0.80 - 1.20
B 0.193 - 0.222 4.90 - 5.64
C 0.232 - 0.250 5.90 - 6.35
D 0.148 - 0.167 3.75 - 4.25
E 0.126 - 0.154 3.20 - 3.92
F 0.189 - 0.213 4.80 - 5.40
G 0.222 - 0.239 5.65 - 6.06
H 0.045 - 0.059 1.15 - 1.50
K 0.012 - 0.020 0.30 - 0.50
J 0.046 - 0.054 1.17 - 1.37
L 0.012 - 0.028 0.30 - 0.71
M 0.016 - 0.028 0.40 - 0.71
N 0.010 TYP. 0.254 TYP.

Notes:

  • Note 1: Surface Mounted on 1 in pad area, t 10 sec.
  • Note 2: Pulse Test : Pulse Width 300s, Duty Cycle 2%.
  • Note 3: Guaranteed by Design, Not Subject to Production Testing.

Ordering Information:

Device Packing Part Number
MCAC40N10YA Tape&Reel: 5Kpcs/Reel Part Number-TP
Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF

2012171134_MCC-MCAC40N10YA-TP_C712281.pdf

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