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quality High Speed Switching MOSFET MCC SI3415B TP with ESD Protection up to 2.5KV and UL 94 V 0 Rated Epoxy factory
quality High Speed Switching MOSFET MCC SI3415B TP with ESD Protection up to 2.5KV and UL 94 V 0 Rated Epoxy factory

High Speed Switching MOSFET MCC SI3415B TP with ESD Protection up to 2.5KV and UL 94 V 0 Rated Epoxy

Key Attributes
Model Number: SI3415B-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
42mΩ@4.5V,5.6A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
1 P-Channel
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
SI3415B-TP
Package:
SOT-23
Product Description

Product Overview

The SI3415B is a P-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering ultra-low RDS(on) and high-speed switching capabilities. It features ESD protection up to 2.5KV (HBM) and utilizes Trench Power LV MOSFET Technology. The epoxy used meets UL 94 V-0 flammability rating, and the device is Moisture Sensitivity Level 1 compliant. Halogen-free options are available upon request by adding the "-HF" suffix, and the product is Lead Free Finish/RoHS Compliant (indicated by the "P" suffix). This transistor is suitable for various applications requiring efficient power management.

Product Attributes

  • Brand: MCC
  • Technology: Trench Power LV MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes (indicated by "P" suffix)
  • Halogen Free: Available upon request (by adding "-HF" suffix)
  • ESD Protection: Up to 2.5KV (HBM)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A -20 V
Zero Gate Voltage Drain Current IDSS VDS =0V, VGS =10V 12 A
Zero Gate Voltage Drain Current IDSS VDS =0V, VGS =8V 2 A
Zero Gate Voltage Drain Current IDSS VDS =-20V, VGS =0V -1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.40 -0.62 -1.0 V
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-5.6A 29 42 m
Drain-Source On-Resistance RDS(on) VGS=-2.5V, ID=-4.3A 36 55 m
Drain-Source On-Resistance RDS(on) VGS=-1.8V, ID=-2A 55 100 m
Diode Forward Voltage VSD VGS=0V, IS=-5.6A -0.8 -1.2 V
Maximum Body-Diode Continuous Current IS -5.6 A
Input Capacitance Ciss VDS=-10V,VGS=-4.5V,ID=-4A 940 pF
Output Capacitance Coss VDS=-10V,VGS=-4.5V,ID=-4A 219 pF
Reverse Transfer Capacitance Crss VDS=-10V,VGS=-4.5V,ID=-4A 116 pF
Total Gate Charge Qg VDS=-10V,VGS=-4.5V,ID=-4A 7.2 nC
Gate-Source Charge Qgs VDS=-10V,VGS=-4.5V,ID=-4A 1.2 nC
Gate-Drain Charge Qg VDS=-10V,VGS=-4.5V,ID=-4A 1.6 nC
Turn-On Delay Time td(on) VDS=-10V,VGS=-4.5V,RL=2.5, RGEN=3 15 ns
Turn-On Rise Time tr VDS=-10V,VGS=-4.5V,RL=2.5, RGEN=3 63 ns
Turn-Off Delay Time td(off) VDS=-10V,VGS=-4.5V,RL=2.5, RGEN=3 21 ns
Turn-Off Fall Time tf VDS=-10V,VGS=-4.5V,RL=2.5, RGEN=3 12 ns
Gate-Source Leakage Current IGSS VGS=0V, VDS=12V 0.079 0.200 A
Total Power Dissipation PD TA=25C Steady State 1.3 W
Total Power Dissipation PD TA=70C Steady State -4.5 A
Drain Current ID TA=25C Steady State -5.6 A
Pulsed Drain Current (Note2) IDM -23 A
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance RthJA Junction to Ambient (Note1) 96 C/W

Notes:

  • 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
  • 2. Pulse Test: Pulse Width300us, Duty cycle 2%.

Ordering Information

Device Packing Part Number
SI3415B Tape&Reel: 3Kpcs/Reel Part Number-TP

Note: Adding "-HF" Suffix For Halogen Free, e.g., Part Number-TP-HF. "P" Suffix Designates RoHS Compliant.


2410010204_MCC-SI3415B-TP_C669007.pdf

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