P Channel MOSFET MCC MCU20P10 TP Featuring Advanced Trench Process and UL 94 V 0 Flammability Rating

Name: P Channel MOSFET MCC MCU20P10 TP Featuring Advanced Trench Process and UL 94 V 0 Flammability Rating
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MCU20P10-TP
Availability: InStock

Key Attributes

Model Number: MCU20P10-TP

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

12A

Operating Temperature -:

-55℃~+150℃@(Tj)

RDS(on):

100mΩ@10V,16A

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

140pF@25V

Number:

1 P-Channel

Input Capacitance(Ciss):

2.1nF@25V

Pd - Power Dissipation:

70W

Gate Charge(Qg):

61nC@10V

Mfr. Part #:

MCU20P10-TP

Package:

TO-252-2

Product Description

Product Overview

The MCU20P10 is a P-Channel MOSFET featuring Advanced Trench Process Technology and a High Density Cell Design for ultra-low on-resistance. It offers a reliable and rugged construction, with an epoxy that meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This product is halogen-free available upon request by adding the "-HF" suffix and is Lead Free Finish/RoHS Compliant, indicated by the "P" suffix. It is suitable for applications requiring high current handling and low on-state resistance.

Product Attributes

Brand: MCCSEMI
Technology: Advanced Trench Process
Flammability Rating: UL 94 V-0
Moisture Sensitivity Level: 1
Certifications: RoHS Compliant
Halogen Free: Available upon request (add "-HF" suffix)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	TC=25C			-100	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID	TC=25C		-12	-225	A
Pulsed Drain Current	IDM				-72	A
Single Pulsed Avalanche Energy	EAS	Note 2			-	mJ
Operating Junction Temperature Range			-55		+150	C
Storage Temperature Range			-55		+150	C
Thermal Resistance Junction to Case	RthJC	Note 1		1.79		C/W
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=-250A	-100			V
Gate-Source Leakage Current	IGSS	VDS=0V, VGS =20V			20	A
Zero Gate Voltage Drain Current	IDSS	VDS=-100V, VGS=0V			-1	A
Gate-Threshold Voltage	VGS(th)	VDS=VGS, ID=-250A	-1	-1.9	-3	V
Drain-Source On-Resistance	RDS(on)	VGS=-10V, ID=-16A		85	100	m
Forward Tranconductance	gFS	VDS=-50V, ID=-10A		5		S
Input Capacitance	Ciss	VDS=-25V,VGS=0V,f=1MHz		2100		pF
Output Capacitance	Coss			590		pF
Reverse Transfer Capacitance	Crss			140		pF
Total Gate Charge	Qg	VDD=-50V,ID=-16A		61		nC
Gate-Source Charge	Qgs			14		nC
Gate-Drain Charge	Qg d			29		nC
Turn-On Delay Time	td(on)	VGS=-10V,RGEN=9.1		16		ns
Turn-On Rise Time	tr			73		ns
Turn-Off Delay Time	td(off)			34		ns
Turn-Off Fall Time	tf			57		ns
Continuous Body Diode Current	IS	TC=25C		-18		A
Body Diode Voltage	VSD	IS=-10A, VGS=0V		-1.2		V
Reverse Recovery Time	trr	IF=-16A,di/dt=100A/s		88.3		ns
Reverse Recovery Charge	Qrr			65.9		nC
Total Power Dissipation	PD	TC=25C		70		W

Ordering Information

Device	Packing	Part Number
MCU20P10	Tape&Reel: 2.5Kpcs/Reel	-TP

Note: Add "-HF" Suffix for Halogen Free, e.g., MCU20P10-TP-HF.

Dimensions (DPAK/TO-252)

DIM	INCHES	MM	NOTE
A	0.087 0.094	2.20 2.40	TYP.
B	0.000 0.005	0.00 0.13	TYP.
C	0.026 0.034	0.66 0.86	TYP.
D	0.018 0.023	0.46 0.58	TYP.
E	0.256 0.264	6.50 6.70	TYP.
F	0.201 0.215	5.10 5.46	TYP.
G	0.236 0.244	6.00 6.20	TYP.
H	0.086 0.094	2.18 2.39	TYP.
I	0.386 0.409	9.80 10.40	TYP.
J	0.055 0.067	1.40 1.70	TYP.
K	0.043 0.051	1.10 1.30	TYP.
L	0.000 0.012	0.00 0.30	TYP.
M	0.190	4.83	TYP.
O	0.114	2.90	TYP.
Q	0.063	1.60	TYP.
V	0.211	5.35	TYP.

Pin Definitions: 1. Gate, 2,4. Drain, 3. Source

2008031236_MCC-MCU20P10-TP_C668963.pdf

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