Low Thermal Impedance N Channel MOSFET LRC LN8320DT1AG Suitable for DC DC Conversion and Motor Drives
Key Attributes
Model Number:
LN8320DT1AG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
3.5W
Input Capacitance(Ciss):
130pF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
LN8320DT1AG
Package:
DFN-8(3x3)
Product Description
Product Overview
The LN8320DT1AG is an N-Channel 30-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This device is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: Halogen Free, RoHS
- Type: N-Channel MOSFET
- Voltage Rating: 30 V (Drain-to-Source)
Technical Specifications
| Parameter | Symbol | Unit | Limits | Notes |
|---|---|---|---|---|
| DraintoSource Voltage | VDSS | V | 30 | |
| GatetoSource Voltage | VGS | V | 20 | |
| Continuous Drain Current | ID | A | 25 (Ta = 70C) | Note 1 |
| Pulsed Drain Current | IDM | A | 100 | Note 2 |
| Power Dissipation | PD | W | 3.5 (Ta = 25C) | Note 1 |
| Storage Temperature Range | Tstg | -55 ~ +150 | ||
| Operating Junction Temperature | TJ | -55 ~ +150 | ||
| Maximum Junction-to-Ambient | RJA | /W | 35 (Ta = 25C) | Note 1 |
| Gate-Source Threshold Voltage | VGS(th) | V | 1.0 (Min), 1.3 (Typ.) | VDS = VGS , ID = 250 uA |
| Gate-Body Leakage | IGSS | nA | 100 | VDS = 0 V, VGS = 20 V |
| Zero Gate Voltage Drain Current | IDSS | A | 1 (Max) | VDS = 24 V, VGS = 0 V |
| Drain-Source On-Resistance | RDS(on) | m | 11 (Typ.) (VGS = 10 V, ID = 12.8 A), 16 (Typ.) (VGS = 4.5 V, ID = 10.3 A) | Note 3 |
| Diode Forward Voltage | VSD | V | 1.2 (Max) | Note 3, IS = 2.3 A, VGS = 0 V |
| Total Gate Charge | Qg | nC | 10 (Typ.) | Note 4 |
| Gate-Source Charge | Qgs | nC | 3.5 (Typ.) | Note 4 |
| Gate-Drain Charge | Qgd | nC | 4 (Typ.) | Note 4 |
| Input Capacitance | Ciss | pF | 1000 (Typ.) | Note 4, VDS = 15 V, VGS = 0 V, f = 1 Mhz |
| Output Capacitance | Coss | pF | 130 (Typ.) | Note 4, VDS = 15 V, VGS = 0 V, f = 1 Mhz |
| Reverse Transfer Capacitance | Crss | pF | 110 (Typ.) | Note 4, VDS = 15 V, VGS = 0 V, f = 1 Mhz |
| Turn-On Delay Time | td(on) | ns | 6 (Typ.) | Note 4 |
| Rise Time | tr | ns | 6 (Typ.) | Note 4 |
| Turn-Off Delay Time | td(off) | ns | 28 (Typ.) | Note 4 |
| Fall Time | tf | ns | 8 (Typ.) | Note 4 |
| Gate Resistance | Rg | 2 (Typ.) | f=1MHz,VGS=0V | |
| Model | LN8320DT1AG | N-Channel 30-V (D-S) MOSFET | ||
| Marking | A20 | |||
| Shipping | 3000/Tape&Reel | |||
| Package Type | DFN3030-8B |
Notes:
1. Surface Mounted on 1 x 1 FR4 Board.
2. Pulse width limited by maximum junction temperature.
3. Pulse test: PW 300s duty cycle 2%.
4. Guaranteed by design, not subject to production testing.
2410010101_LRC-LN8320DT1AG_C2912037.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
