High Cell Density DMOS Trench N Channel MOSFET MATSUKI ME08N20 G for DC to DC Conversion Applications
Key Attributes
Model Number:
ME08N20-G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
350mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
21pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.61nF@25V
Pd - Power Dissipation:
74.9W
Gate Charge(Qg):
51.7nC@10V
Mfr. Part #:
ME08N20-G
Package:
TO-252-3
Product Description
Product Overview
The ME08N20 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converter circuits requiring low in-line power loss. It offers an RDS(ON) of 0.4 Ohm at VGS=10V and exceptional DC current capability.
Product Attributes
- Product Name: ME08N20/ME08N20-G
- Type: N-Channel MOSFET
- Certifications: Pb-free (ME08N20), Green product-Halogen free (ME08N20-G)
- Package Outline: TO-252-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | 200 | V | |||
| VGS | 20 | V | ||||
| ID | TC=25 | 9 | A | |||
| ID | TC=70 | 7.2 | A | |||
| IDM | 36 | A | ||||
| PD | TC=25 | 74.9 | W | |||
| PD | TC=70 | 47.9 | W | |||
| Electrical Characteristics | V(BR)DSS | VGS=0V, ID=250A | 200 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | ||
| IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| IDSS | VDS=200V, VGS=0V | 1 | A | |||
| RDS(ON) | VGS=10V, ID=5A | 0.35 | 0.40 | |||
| VSD | IS=9A, VGS=0V | 1.5 | V | |||
| Qg | VDD=160V, VGS=10V, ID=9A | 51.7 | nC | |||
| Qgs | 12.7 | |||||
| Qgd | 16.3 | |||||
| Ciss | VDS=25V, VGS=0V, f=1MHz | 2610 | pF | |||
| Coss | 68 | |||||
| Crss | 21 | |||||
| td(on) | VDS=160V, VGS=10V, RG=4.7, RL=17.7 | 26.9 | ns | |||
| tr | 37.2 | |||||
| td(off) | 63.5 | |||||
| tf | 43.8 | |||||
| Thermal Resistance | TJ | -55 | 150 | |||
| RJC | * | 1.67 | /W |
2410121657_MATSUKI-ME08N20-G_C709728.pdf
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