86--136 6733 2386
quality Surface mount power field effect transistor MATSUKI ME4542 optimized for minimal on state resistance factory
quality Surface mount power field effect transistor MATSUKI ME4542 optimized for minimal on state resistance factory

Surface mount power field effect transistor MATSUKI ME4542 optimized for minimal on state resistance

Key Attributes
Model Number: ME4542
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
-
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
360pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
-
Mfr. Part #:
ME4542
Package:
SOP-8
Product Description

Product Overview

The ME4542 is an N and P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This technology is optimized for minimal on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.

Product Attributes

  • Brand: Not explicitly stated, but implied by "ME4542" product code.
  • Origin: Not explicitly stated.
  • Material: Not explicitly stated.
  • Color: Not applicable.
  • Certifications: Pb-free (ME4542), Green product-Halogen free (ME4542-G).

Technical Specifications

ParameterSymbolN-Channel (ME4542)P-Channel (ME4542-G)Unit
Maximum Ratings
Drain-Source VoltageVDS30-30V
Gate-Source VoltageVGS±20±20V
Continuous Drain Current (TA=25)ID7.1-6A
TA=705.7-4.8A
Pulsed Drain CurrentIDM28-24A
Maximum Power Dissipation (TA=25)PD22W
TA=701.31.3
Operating Junction TemperatureTJ-55 to 150
Thermal Resistance-Junction to Ambient *RθJA62.5/W
Static Electrical Characteristics
Drain-Source Breakdown VoltageV(BR)DSS30 (VGS=0V, ID=250μA)-30 (VGS=0V, ID=-250μA)V
Gate Threshold VoltageVGS(th)1.0 to 3.0 (VDS=VGS, ID=250μA)-1.0 to -3.0 (VDS=VGS, ID=-250μA)V
N-ChP-Ch
Gate Leakage CurrentIGSS±100 (VDS=0V, VGS=±20V)nA
Zero Gate Voltage Drain CurrentIDSS1 (VDS=30V, VGS=0V)-1 (VDS=-30V, VGS=0V)μA
Drain-Source On-State ResistanceRDS(ON)21 (VGS=10V, ID=6.7A)30 (VGS=-10V, ID=-6.1A)mΩ
25 (VGS=10V, ID=6.7A)35 (VGS=-10V, ID=-6.1A)
32 (VGS=4.5V, ID=5.0A)48 (VGS=-4.5V, ID=-5.0A)
40 (VGS=4.5V, ID=5.0A)58 (VGS=-4.5V, ID=-5.0A)
Diode Forward VoltageVSD0.8 (IS=1.7A, VGS=0V)-0.8 (IS=-1.7A, VGS=0V)V
Dynamic Electrical Characteristics
Total Gate ChargeQg12 (N-Ch)21 (P-Ch)nC
Gate-Source ChargeQgs2 (N-Ch)4 (P-Ch)nC
Gate-Drain ChargeQgd2.5 (N-Ch)6 (P-Ch)nC
Input CapacitanceCiss360 (N-Ch)840 (P-Ch)pF
(VDS=15V, VGS=0V, f=1MHz)(VDS=15V, VGS=0V, f=1MHz)
Output CapacitanceCoss70 (N-Ch)120 (P-Ch)pF
(VDS=15V, VGS=0V, f=1MHz)(VDS=15V, VGS=0V, f=1MHz)
Reverse Transfer CapacitanceCrss17 (N-Ch)32 (P-Ch)pF
(VDS=15V, VGS=0V, f=1MHz)(VDS=15V, VGS=0V, f=1MHz)
Gate ResistanceRg0.5 (N-Ch) / 5.5 (P-Ch) (VDS=0V, VGS=0V, f=1MHz)Ω
Turn-On Delay Timetd(on)9.3 (N-Ch)32 (P-Ch)ns
(VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω)(VDD=-15V, RL=15Ω, ID=-1A, VGEN=-10V,RG=6Ω)
Turn-On Rise Timetr14 (N-Ch)13 (P-Ch)ns
(VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω)(VDD=-15V, RL=15Ω, ID=-1A, VGEN=-10V,RG=6Ω)
Turn-Off Delay Timetd(off)32 (N-Ch)58 (P-Ch)ns
(VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω)(VDD=-15V, RL=15Ω, ID=-1A, VGEN=-10V,RG=6Ω)
Turn-Off Fall Timetf3.2 (N-Ch)6.8 (P-Ch)ns
(VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω)(VDD=-15V, RL=15Ω, ID=-1A, VGEN=-10V,RG=6Ω)

2410121631_MATSUKI-ME4542_C165234.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification factory
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.