Trench MOSFET Device LRC LN237N3T5G 30V Single N Channel with Low RDS ON and Fast Switching Features
Key Attributes
Model Number:
LN237N3T5G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1.5A
RDS(on):
680mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.2pF
Number:
1 N-channel
Input Capacitance(Ciss):
55.8pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
750pC@4.5V
Mfr. Part #:
LN237N3T5G
Package:
SOT-883-3
Product Description
Product Overview
The LN237N3T5G is a 30V, single N-channel Trench MOSFET designed for various electronic applications. It features fast switching, low RDS(ON), and is manufactured using Trench MOSFET technology. This device is Pb-Free, RoHS compliant, and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Key applications include low-side load switching, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Technology: Trench MOSFET
- Compliance: Pb Free Device, RoHS, Halogen Free
- Qualification (S- prefix): AEC-Q101 qualified, PPAP capable
- Material: Compliant with RoHS requirements and Halogen Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V | |||
| Gate-to-Source Voltage | VGS | 12 | V | |||
| Drain Current (Steady State, TA = 25C) | ID | 3.7 | A | Note 1 | ||
| Drain Current (Steady State, TA = 100C) | ID | 1.5 | A | Note 1 | ||
| Power Dissipation (Steady State, Note 1) | PD | 305 | mW | |||
| Junction-to-Ambient Thermal Resistance (Steady State, Note 1) | RJA | 715 | /W | |||
| Operating Junction and Storage Temperature Range | TJ , TSTG | -55 | 150 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | (1/8 from case for 10 s) | |||
| Pulsed Drain Current (tp = 10 s) | IDM | 30 | A | |||
| Drain-Source Breakdown Voltage (VGS =0V, ID =250A) | V(BR)DSS | 30 | V | |||
| Gate Threshold Voltage (VDS =VGS , ID =250A) | VGS(th) | 0.45 | 1 | V | ||
| Gate-Body Leakage Current (VDS =0V, VGS =12V) | IGSS | 10 | A | |||
| Zero Gate Voltage Drain Current (VDS =30V, VGS =0V) | IDSS | 0.1 | 1 | A | ||
| Drain-Source On-Resistance (VGS =4.5V, ID = 500mA) | RDS(ON) | 0.13 | 0.29 | |||
| Drain-Source On-Resistance (VGS =2.5V, ID = 500mA) | RDS(ON) | 0.29 | 0.5 | |||
| Diode Forward Voltage (IS =300mA, VGS =0V) | VSD | 0.68 | V | |||
| Total Gate Charge | Qg | 55.8 | nC | (VDS =15V, VGS =4.5V, ID =1.0A) | ||
| Gate-Source Charge | Qgs | 1.2 | nC | (VDS =15V, VGS =4.5V, ID =1.0A) | ||
| Gate-Drain Charge | Qgd | 0.46 | nC | (VDS =15V, VGS =4.5V, ID =1.0A) | ||
| Input Capacitance | Ciss | 750 | pF | (VDS =15V, VGS =0V, f=1MHz) | ||
| Output Capacitance | Coss | 150 | pF | (VDS =15V, VGS =0V, f=1MHz) | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | (VDS =15V, VGS =0V, f=1MHz) | ||
| Turn-On Delay Time | td(on) | 10.10 | ns | (VDS =30V, ID=0.5A, VGS=4.5V, RG =2, RL =30 , tp=1us) Note 2 | ||
| Rise Time | tr | ns | (VDS =30V, ID=0.5A, VGS=4.5V, RG =2, RL =30 , tp=1us) Note 2 | |||
| Turn-Off Delay Time | td(off) | ns | (VDS =30V, ID=0.5A, VGS=4.5V, RG =2, RL =30 , tp=1us) Note 2 | |||
| Fall Time | tf | ns | (VDS =30V, ID=0.5A, VGS=4.5V, RG =2, RL =30 , tp=1us) Note 2 | |||
| Gate Resistance | Rg | 9.7 | (VDS = 0 V, VGS = 0 V, f = 1 MHz) |
Note 1: Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Pulse test; pulse width300s, duty cycle 2%
2112160930_LRC-LN237N3T5G_C383245.pdf
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